国家/地区 中国（17）
IPC部 C（17）
IPC大类 C23（17）
IPC小类 C23C（17） H01L（13） C01B（12）
B82Y（5） C30B（5） H01B（4）
B32B（3） B01J（2） C23F（2）
IPC C23C016/01（17）
发明人 LIU Z（2）
公开年 2012（3） 2016（3） 2015（2） 2017（2） 2023（2）
申请年 2014（3）  2012（2）  2015（2）  2016（2）  2022（2） 
专利权人

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Composite current collector useful for enhancing conductivity, comprises e.g. high molecular support layer as central layer, nano-silver wire reinforced conductive layer arranged on both sides, the metal layer and the graphene reinforced conductive layer arranged between the metal layer.

ZHANG G, LI X, XIA J, ZHU Z, WANG S

Diode for semiconductors, has heterojunction device with vertical structure, which is indium tin oxide substrate, gallium oxide film, graphene film and aluminum electrode layer, from bottom to top.

XIANG J, JIA M, HAN T, TANG L

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Preparing ultra-flexible translucent complex conductive film useful in e.g. flexible touch screen comprises e.g. placing copper foil, growing graphene nano-wall on the surface and coating ethylene-vinyl acetate polymer and butyl acetate.

GUO X, CHEN Z, LIU Y, ZHANG W, ZHAO L, LIU C, YIN L, JIN K, ZHNG T

Growing nitride epitaxial wafer used for gallium nitride-based lasers involves polishing copper substrate, cleaning, forming graphene layer, transferring graphene layer to target substrate, and growing aluminum nitride layer.

WANG W, LONG H, LI Z, LI M, ZHANG J

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S