国家/地区 中国（8）
IPC部 C（8）
IPC大类 C01（8） C04（2） H01（2）
IPC小类 C01B（8）
IPC C01B031/04（8） C04B041/50（2） C04B041/85（2）
发明人 ZHANG C（8）
公开年 2013（5） 2012（3）
申请年 2012（4）  2013（4） 
专利权人 UNIV XIDIAN（8）

Preparation of graphene on silicon carbide substrate used for manufacturing microelectronic devices and biological sensors, involves washing silicon carbide substrate, and placing in graphene growth device with argon gas and chlorine.

GUO H, LEI T, ZHANG Y, ZHANG C, LING X

Preparation of large-area graphene used for biological, optical and electrical sensor, involves cleaning silicon carbide, heating, carrying out hydrogen etching treatment, mixing argon and carbon tetrachloride, plating and annealing.

GUO H, LEI T, LIU J, ZHANG Y, ZHANG C

Graphene preparation method for nickel film annealing of silicon carbide substrate involves generating carbon film, introducing nickel film via growth device, electron beam evaporation and deposition and depositing nickel onto carbon film.

GUO H, LEI T, WEI C, ZHANG Y, ZHANG C

Copper film annealing of silicon carbide substrate in chlorine used in synthesizing graphene by forming carbon film on copper film by physical vapor deposition, plating copper layer, introducing argon gas and annealing.

GUO H, LEI T, ZHANG Y, ZHANG C, LING X

Preparation of silicon-substrate patterned graphene involves passing argon gas-carrying carbon tetrachloride to quartz tube with to-be-patterned film, depositing nickel film on obtained carbon film, annealing and removing nickel film.

LEI T, GUO H, ZHANG Y, ZHANG K, ZHANG C, ZHAO Y

Method for preparing double-layer structural graphene used for manufacturing microelectronic device, involves placing generated double-layer carbon film into buffered hydrofluoric acid solution to remove all silicon dioxide of window.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG C

Preparation of structured graphene for producing microelectronic device, involves cleaning silicon substrate, providing cleaned silicon substrate in reaction chamber, vacuumizing and providing double-layer carbon film sample.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG C

Preparation of structured graphene at 3C-silicon carbide substrate for preparing microelectronic device, by placing washed silicon substrate in chemical vapor deposition system, vacuumizing, heating, introducing propane, and carbonizing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG C, ZHANG F