国家/地区 台湾（9）
IPC部 C（9）
IPC大类 C23（9）
IPC小类 C23C（9） H01L（9） C01B（8）
B82Y（5） B05D（2） B32B（2）
B82B（2） C25D（2）
IPC C23C016/56（9）
发明人 THOMAS S（3） GLASS H（2） GUINEY I（2）
TYLER M（2） WALLIS R（2）
公开年 2021（5）
申请年 2020（3）  2021（2） 
专利权人 PARAGRAF LTD（2）

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Producing polymer-coated graphene layer structure involves e.g. adding substrate to reaction chamber, supplying flow comprising precursor compound to form graphene layer structure, heating and spin-coating using polymer or polymer precursor.

GLASS H, GUINEY I, TYLER M, WALLIS R, THOMAS S, TAYLOR M

Production of electronic device such as integrated circuit board, involves providing substrate, supplying flow comprising precursor compound, selectively laser ablating graphene, and selectively laser ablating surface of substrate.

GLASS H, GUINEY I, TYLER M, WALLIS R, BAINES R, THOMAS S

Article used in electronic device, comprises substrate, and coating layer comprising three-dimensional construction of graphene structure having hollow core of spherical structure with specified average surface area and average diameter.

LI C, LIU X, SONG Z, SONI K K

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V