国家/地区 美国（101）
IPC部 C（101）
IPC大类 C23（101） H01（63） C01（38）
B82（15） C25（13） B01（12）
C30（9） C09（8） B05（7）
B22（7） H05（7） G01（6）
B32（5） C08（5） B33（4）
IPC小类 C23C（101）
IPC C23C016/26（35） C23C016/02（21） H01L021/02（20）
C23C016/44（16） C01B032/186（15） C23C016/04（15）
C23C016/455（15） B82Y030/00（14） C01B032/194（14）
B82Y040/00（11） C23C016/56（11） C23C016/30（10）
C23C014/06（9） C23C016/34（9） C23C016/505（9）
发明人 SHIN H（6） SHIN H J（6） BYUN K（5）
BYUN K E（5） LEE C（5） LEE C S（5）
LEE E（4） NAGEL C J（4） BRODEUR C L（3）
GLASS H（3） GUINEY I（3） IFUKU R（3）
KUBO T（3） MATSUMOTO T（3） SHEN X（3）
公开年 2021（101）
申请年 2020（56）  2021（37）  2019（8） 
专利权人 SAMSUNG ELEC.（8） QUANTUM ELEM.（4） TOKYO ELECTR.（4） UNIV SUNGKYU.（4）
APPLIED MATE.（3） PARAGRAF LTD（3） YAZAKI CORP（3） KOREA INST S.（2）
LAM RES CORP（2） NAT INST ADV.（2） UNIV JIANGSU（2） UNIV SINGAPO.（2）

Producing octahedral transition metal dichalcogenides involves forming transition metal layer on substrate and injecting chalcogenide-containing gas onto the substrate together with plasma treatment.

VINIT K, KIM H U, LEE J, SEOK H, KIM T, KIM T S, SEOK H H, WOO K H, CANADEVINIT

Loaded body for fuel cell, has sputtering source, pulse power supply, inert gas supply unit and nanocluster growth cell, where when nanoclusters are produced in vapor phase using nanocluster generating device, and nanoclusters are supported on carrier, each carriers loaded with nanoclusters.

NAKAJIMA A, TSUNOYAMA H, UNO M, GUNJI H, ANDO T, TSUKAMOTO K, TONA M, HIRATA N

Growing two-dimensional transition metal chalcogenide film for manufacturing e.g. diode, involves placing patterned metal layer on substrate surface, supplying chalcogen precursor and transition metal precursor to chamber, and evacuating.

LEE E, AHN W, KIM H, LEE H, LEE H S, KIM H S, AHN W S, HA L

Structure e.g. porous metal-coated structure used for e.g. catalytic application, comprises substrate comprising activated adsorbent material, and metal material deposited on substrate.

PEPIN P, ETHRIDGE K, THOMSON C, HOLBROOK B, ESRIDGE K

Reactor assembly comprises gas inlet, gas outlets, reactor chamber, porous frits having porosity and comprising nanoporous carbon material, reactor head space, reactor assembly lamps, and computer processing unit.

NAGEL C J, BRODEUR C L

Printing and growing of three-dimensional conducting structure of elementary metal for three-dimensional packaging, involves supplying solution into plasma, and reducing oxidation state of metal by reactive plasma species to form metal.

KOEHNE J E, MEYYAPPAN M, GANDHIRAMAN R

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Active element of electrochemical apparatus for producing electrical power and/or hydrogen, has coating of boron enhanced material which includes elements selected from carbon, graphite, graphene, nickel, tungsten, phosphorus, and copper.

MAGUIRE D, FERTMAN M

Preparing graphene reinforced aluminum matrix composite material involves obtaining raw materials by drying graphene, aluminum powder and aluminum blocks in a drying box, and removing moisture, and chemically plating surface of the graphene with aluminum.

MA L, DING Y, YANG T, ZHAN S, JIA D, FAN Z, LI X, LI J, TU J, LI Y, DUAN H

Corrosion prevention composition for metal substrate, comprises sacrificial metal particles, where sacrificial metal particles comprise metal selected from nickel, molybdenum, or cobalt, and sacrificial metal particles are not passivated.

HAWKINS T, VIRTANEN J A