国家/地区 美国（22） 韩国（13） 日本（10） 世界知识产权组织（10） 中国（8） 欧洲专利局（EPO）（5） 英国（2） 台湾（2）
IPC部 C（33）
IPC大类 C23（33）
IPC小类 C23C（33） C01B（26） H01L（22）
B82Y（19） B32B（13） H01B（10）
B01J（7） B05D（4） H05K（4）
B82B（3） C30B（3） H01M（3）
H05B（3） B44C（2） C23F（2）
IPC C23C016/26（33）
发明人 CHOI J（3） CHAI Z（2） CHOI B（2）
CHOI B L（2） CHOI J Y（2） HAN D（2）
HAO Y（2） HUNLEY D P（2） LEE E（2）
LEE E K（2） LEE J（2） NING J（2）
SHIN H（2） SHIN H J（2） STRACHAN D R（2）
公开年 2013（19） 2012（12） 2014（2）
申请年 2012（33）
专利权人 SAMSUNG ELEC.（5） UNIV XIDIAN（3） HANWHA AEROS.（2） HANWHA TECHW.（2）
SAMSUNG TECH.（2） TOSHIBA KK（2） UNIV KENTUCK.（2） UNIV SUNGKYU.（2）
UNIV SUNGKYU.（2）

Graphene transfer method using electromagnetic levitation, comprises annealing graphene thin film in levitation state, and transferring by contacting the graphene thin film and a substrate in levitation state.

JOO I L, WONDONG K, JUNG H K, CHAN Y H, YONG H S

Preparing graphene-silicon composite material used in lithium ion battery, involves heating substrate in vacuum reaction chamber in protective gas and vacuum condition.

WANG Y, ZHONG H, ZHOU M

Formation of graphene film used for e.g. electronic device, involves performing reduction process by heating metal film in atmosphere containing hydrogen gas, carrying out graphene film growth process, and cooling.

YOSHII S, NOZAWA K, MATSUKAWA N

Composition, useful in an electronic device, spintronic device or optoelectronic device, comprises ordered film of boron nitride containing multiple layers, where the film has a major surface, and a layer of graphene formed on major surface.

KELBER J A

Formation method for transparent conductive film, involves forming transparent conductive film comprising sheet-like graphene, by sintering coated graphene ink to base-material surface at predetermined temperature.

TAKEI H, SAKIO S, SATO M, HIRAOKA K, IKEDA S, SAKAO Y, OTAKE F

Growing graphene by chemical vapor deposition used in electronics involves disposing metals and dielectric substrates in reactor, where gap is formed between them/introducing and heating reaction gases/depositing graphene films on substrate.

TENG P, LIN Y, CHIU P, TENG P Y, LIN Y C, CHIU P W

Producing a graphene to make transparent electrode of e.g. optical detector, comprises depositing catalyst on substrate, heating substrate by vapor deposition of carbon contained in catalyst, cooling heated substrate and etching.

SONG Y W, LIM J A, KANG D S, KIM W J

Manufacturing method of semiconductor device, involves forming graphene layer on catalyst layer after planarizing exposed surface of catalyst layer by oxidation-treating.

YAMAZAKI Y, KATAGIRI M, SAKAI T, SAKUMA H, KITAMURA M, SAKATA A, WADA M, KAJITA A, MIZUSHIMA I, SAKUMA N

Manufacturing electrical conductor, comprises providing substrate layer, depositing surface layer on substrate layer, and depositing graphene layer on substrate layer.

SULLIVAN M M E, HILTY R D, MARTENS R I, ZHENG M, HEMOND J H B, LIU Z, SULLIVAN MALERVY M E, SULLIVAN MALERVY M, HILTY R, MARTENS R, HEMOND J, SULLIVANMALERVY M E

Forming graphene film (on surface of substrate) used in e.g. lasers, comprises locating carbon source at or in vicinity of surface, controlling ambient conditions, applying temporary change of condition at localized site and controlling.

DONG G