国家/地区 美国（16） 世界知识产权组织（10） 中国（9） 韩国（6） 日本（2）
IPC部 C（20）
IPC大类 C23（20） H01（19） C01（13）
B82（6） H05（3） B32（2）
C30（2） G09（2）
IPC小类 C23C（20） C01B（13） H01L（13）
B82Y（6） H01B（4） H01G（3）
B32B（2） C30B（2） H01M（2）
IPC C23C016/26（20）
发明人 DAVIS M A（2） LEE Y（2） WANG Y（2）
公开年 2014（20）
申请年 2014（10）  2013（8）  2012（2） 
专利权人 DAVIS M A（2） SAMSUNG ELEC.（2） SHENZHEN CHI.（2） SOLAN LLC（2）

Large-surface-area single-crystal monolayer graphene material for e.g. transparent electrode, has graphene layer arranged on flat board or catalytic layer, where catalytic layer is arranged on crystal plane that is arranged on substrate.

PARK H B, KIM H, YOON H W, PARK S M, LEE M Y, HO B P, HEE W Y, SUN M P, YONG L M, LEE M, PARK H, PARK S, YOON H

High heating carbon crystal plate, has hard plastic plate whose surface is coated with graphene, temperature resistant insulation layer coated with silicon carbide, where plate is made of polyamide, phenolic aldehyde resin and epoxy resin.

CHEN Z, WU C

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y

Method for growing graphene layer on metal foil for e.g. forming field-effect transistor, involves positioning foil in vessel placed in chamber, introducing hydrogen, annealing foil, introducing methane and depositing carbon on foil.

ZHOU C, ZHANG Y, ZHANG L

Board for forming graphene layer, comprises board layer; metal catalyst layer disposed on the board layer and functioning as a catalyst for forming the graphene layer; and stress reduction layer to reduce stress of the metal catalyst layer.

CHO B J, MUN J H

Producing graphene by plasma-enhanced chemical vapor deposition, comprises applying potential and exciting plasma-forming gas between metal substrate and carbonaceous electrode, ablating reactive carbon species, and growing graphene.

SINTON S W, BEDWORTH P V

Graphene wiring for semiconductor device comprises substrate, catalyst layer on substrate, graphene layer on catalyst layer, and dopant layer which contains atom or molecule in side surface of graphene layer.

MIYAZAKI H, SAKAI T, KATAGIRI M, YAMAZAKI Y, SAKUMA H, SUZUKI M, SAKUMA N

Forming graphite-based structure involves patterning substrate thus forming elements, creating graphene initiating layer on first side wall of first element, and generating graphene on first side wall using graphene initiating layer.

DAVIS M A

Preparing carbon nanotube-graphene composite, comprises inserting carbon nanotube chemical vapor deposition catalyst between stacked graphene sheets, heating nanotube chemical vapor deposition catalyst, growing and cooling carbon nanotubes.

HE P

Method for forming graphite-based structure used for e.g. electronic devices, involves patterning substrate, forming elements on substrate, depositing graphene initiating layer on top surface of each element, and generating graphene.

DAVIS M A