国家/地区 韩国（24）
IPC部 C（24）
IPC大类 C23（24） H01（24） C01（13）
B32（2） C09（2） H05（2）
IPC小类 C23C（24） H01L（15） C01B（13）
H01M（8） H01J（6） B32B（2）
C09D（2） H01B（2） H01G（2）
H05H（2）
IPC C23C016/26（24）
发明人 IFUKU R（4） MATSUMOTO T（4） NARKEVICIUTE I（3）
VARADARAJAN B N（3） BYUN K（2） BYUN K E（2）
KIM S Y（2） LEE C（2） LEE C S（2）
LEE S（2） LIM J（2） SHARMA K（2）
SHIN H（2） SHIN H J（2） SUGIURA M（2）
公开年 2021（24）
申请年 2020（11）  2021（8）  2019（5） 
专利权人 TOKYO ELECTR.（4） LAM RES CORP（3） DAEJOO ELECT.（2） SAMSUNG ELEC.（2）
UNIV SINGAPO.（2） UNIV SUNGKYU.（2）

Selective deposition on dielectric layer comprises providing semiconductor substrate, selectively depositing graphene on exposed metal surface of metal layer of substrate, and selective depositing dielectrically-deposited material on layer.

NARKEVICIUTE I, VARADARAJAN B N, SHARMA K, NARKEBICHUDDER I

Method for forming film e.g. graphene film on substrate, involves supplying aromatic hydrocarbon gas having functional group, to substrate on which base film is formed, and activating aromatic hydrocarbon gas adsorbed on surface of base film by plasma of reaction gas containing rare gas.

MATSUMOTO T, IFUKU R

Anode current collector useful in lithium ion battery and supercapacitor, comprises aluminum conductive thin film, and graphene layer transferred to one surface of aluminum thin film.

YANG C M, KIM S Y, WEE J

Silicon-based-carbon composite useful in cathode material of lithium secondary battery, comprises core-shell structure, where core includes e.g. silicon and magnesium silicate, and the shell includes first and second carbon layers.

HYUN L J, HUNSOO P, LEE S, HEE L, LIM J

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Producing hexagonal boron nitride or graphene two-dimensional composite material, involves obtaining obtaining germanium substrate, depositing hexagonal boron nitride on germanium substrate by controlling area and depositing graphene.

LEE J, HYEON S H, HYEONG S

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Transferring graphene involves forming graphene on first substrate, forming polymer precursor mixture on second substrate, providing graphene oppositely to second substrate having polymer precursor mixture.

GU T J, JANG W, SEO Y, WHANG D, WHANG D M, SEO Y M, JANG W S

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A