国家/地区 韩国（25）
IPC部 C（25）
IPC大类 C01（25）
IPC小类 C01B（25）
IPC C01B032/182（25）
发明人 BYUN K（2） BYUN K E（2） HAN S H（2）
HOWE W R（2） HUNT J H（2） IFUKU R（2）
JIN C（2） KIM C（2） KIM H K（2）
KIM Y K（2） LEE C（2） LEE C S（2）
LEE E（2） LEE S J（2） LI A W（2）
公开年 2015（8） 2017（6） 2021（3） 2016（2） 2018（2）
申请年 2014（6）  2015（4）  2017（4）  2021（3）  2016（2）  2019（2） 
专利权人 BOEING CO（2） CORNING INC（2） KOREA ELECTR.（2） SAMSUNG ELEC.（2）
TOKYO ELECTR.（2） UNIV CALIFOR.（2）

Controlling stress of amorphous carbon film, comprises depositing first amorphous carbon layer on substrate, and stacking graphene layer on amorphous carbon layer, and depositing second amorphous carbon layer on graphene and carbon layer.

KIM K

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Composite powder useful for powder metallurgy and additive manufacturing processes, comprises particles with a core of an iron based material and a coating of a graphene based material.

JANSSON U, TIDEN S, TAHER M, DIAZ L, REMONEN T, JANSSEN U

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Manufacture of graphene structure used for wiring, involves preparing substrate to be processed, and forming graphene structure on substrate surface by plasma chemical vapor deposition using plasma of process gas containing oxidizing gas.

RYOTA I, TAKASHI M, IFUKU R, MATSUMOTO T

Method for doping synthesized graphene by high temperature heat treatment in gas atmosphere containing dopant,.

HAM M H, SON M W, MYUNGWOO S

Manufacturing graphene film used for manufacturing pellicle involves coating graphene with protective film, removing base material by wet etching with etching liquid and dissolving protective film using solvent having lower surface tension.

YANASE Y, YANASE M, LIANG L

Graphene composite electrode used for manufacturing electrochromic device, consists of graphene layer, atomic layer formed on graphene layer, and transparent conductive layer formed on atomic layer.

KIM H K, KIM Y K, HAN S H, LEE S J, SEO J W

Manufacture of electrochromic device used as e.g. smart window, involves growing graphene on substrate, performing atomic layer deposition process on graphene layer, forming atomic layer, and forming conductive layer on atomic layer.

KIM H K, KIM Y K, HAN S H, LEE S J, SEO J W