国家/地区 美国（22） 韩国（21） 世界知识产权组织（12） 日本（11） 中国（7） 欧洲专利局（EPO）（5） 台湾（3） 加拿大（2）
IPC部 C（33）
IPC大类 C01（33）
IPC小类 C01B（33）
IPC C01B031/02（33）
发明人 CHOI J（2） CHOI J Y（2） HONG B H（2）
HUNLEY D P（2） LEE J（2） SHIN H（2）
SHIN H J（2） STRACHAN D R（2） WOO Y（2）
WOO Y S（2） YOON S（2） YOON S M（2）
公开年 2013（20） 2012（10） 2014（3）
申请年 2012（33）
专利权人 HANWHA TECHW.（4） SAMSUNG TECH.（4） HANWHA AEROS.（3） SAMSUNG ELEC.（3）
GRAPHENE SQU.（2） UNIV CHUNGAN.（2） UNIV KENTUCK.（2） UNIV SUNGKYU.（2）

Manufacturing metal doped zinc oxide-graphene oxide composite film comprises producing graphene oxide by stirring graphite powder and acid solution, injecting hydrogen peroxide, mixing with zinc- and metal salt solution, and depositing.

KIM J Y, KWON B J, KIM U S, CHO W S

Manufacturing graphene involves preparing a carrier member on which the graphene is formed on one surface, exposing the graphene to dopant vapor, transferring the doped graphene onto a target member, and removing the carrier member.

YOON J, YOON J H

Bidirectional doping method of graphene involves doping graphene using dopant, transferring graphene on self-assembled monolayer, and forming self-assembled monolayer on base material.

HONG B H, KIM Y, PARK J

Graphene patterning method involves adhering two different substrates, coating graphene oxide on upper substrate and then forming patterned bonding layer on graphene oxide-coated substrate.

CHANG S T, KIM N H

Formation of graphene film used for e.g. electronic device, involves performing reduction process by heating metal film in atmosphere containing hydrogen gas, carrying out graphene film growth process, and cooling.

YOSHII S, NOZAWA K, MATSUKAWA N

Method for manufacturing epitaxial structure of e.g. LED, involves forming graphene layer on epitaxial growth surface, and epitaxially growing epitaxial layer on epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Manufacture of boron-doped reduced graphene oxide used for electrode of capacitor, involves dispersing graphene oxide into aqueous solvent, adding borane-tetrahydrofuran to obtained dispersion solution, then refluxing, and cooling.

PARK S, HAN J W

Plasma process apparatus used to process e.g. graphene used in the fabrication of transistor, comprises reactor comprising electrode portions to feed constant high voltage for plasma discharge reaction generated in processing channel.

KIM S, YONG D K, BYUNG G S, SUN Y C, MYOUNG S S, BYUNG H K, KYU H L, MOON W L

Formation method for transparent conductive film, involves forming transparent conductive film comprising sheet-like graphene, by sintering coated graphene ink to base-material surface at predetermined temperature.

TAKEI H, SAKIO S, SATO M, HIRAOKA K, IKEDA S, SAKAO Y, OTAKE F

Preparing graphene used in e.g. memory device, comprises forming organic thin film on substrate, irradiating upper portion of organic thin film with radiation to cross-link organic thin film, and then carbonizing.

CHOI J H, JUNG C H, HWANG I T, KANG D W