国家/地区 中国（9）
IPC部 C（9）
IPC大类 C01（9）
IPC小类 C01B（9）
IPC C01B031/02（7） C01B031/04（5） C23C016/26（5）
B82Y030/00（3） B82Y040/00（3） H01L021/02（3）
H01L021/205（3） H01L029/16（3） C01B032/00（2）
C23C016/56（2） H01B001/04（2） H01G011/22（2）
H01L021/04（2） H01L021/20（2） H01L029/06（2）
发明人
公开年 2012（6） 2013（3）
申请年 2012（9）
专利权人

Method for manufacturing epitaxial structure of e.g. LED, involves forming graphene layer on epitaxial growth surface, and epitaxially growing epitaxial layer on epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Flexible substrate processing apparatus used for reducing graphene oxide to form graphene comprises substrate carrying-out portion; reduction treatment portion; washing portion; drying portion; and substrate carrying-in portion.

TAKAHASHI M, SAITO Y, MOMO J, MORIWAKA T, KUSUMOTO N, MORIWAKA K, YONEDA Y

Conductive material useful in an electric device, comprises a carbon substance comprising a graphene (a single-layered graphene or a multilayered graphene), and a metallic substance mixed with and/or laminated to the carbon substance.

NAITO K, YOSHINAGA N, NAKANO Y, AKASAKA Y, MATAKE S, AKITA M, MATEKE S

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H

Manufacture of graphene film used for e.g. transparent display, involves forming graphene on catalyst metal film, forming another film on surface of graphene, on which catalyst metal film is not formed, and removing catalyst metal film.

SONG Y, SONG Y I

Method for n-doping of graphene for use in e.g. sensor, involves growing graphene on substrate by supplying reaction gas containing carbon source, heating and doping using n-type dopant or vapor containing n-type dopant.

HONG B H, KIM E S, KIM E, HONG B

Manufacture of multilayer graphene-coated substrate used as e.g. transparent conductive film and electroconductive film, involves laminating multilayer graphene obtained from multilayer graphene assembly on surface of substrate.

MURAMATSU K

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y