国家/地区 日本（16） 美国（12） 韩国（10） 世界知识产权组织（9） 中国（7） 欧洲专利局（EPO）（5） 台湾（2）
IPC部 C（18）
IPC大类 C01（18）
IPC小类 C01B（18）
IPC C01B032/15（18）
发明人 HOWE W R（2） HUNT J H（2） LI A W（2）
公开年 2015（7） 2017（4） 2016（2） 2022（2）
申请年 2014（5）  2016（4）  2015（3） 
专利权人 BOEING CO（2）

Producing coated nano-ordered carbon particles used in anode within rechargeable battery including sodium-ion batteries and other metal-ion batteries, involve exposing carbon-containing material to expanding agent to produce expanded carbonaceous particles during expanding process.

ENTERKIN J A, WORFOLK B J, ZHANG L

Structure useful in sliding member and connector, comprises structure in which nanocarbon material is arranged on surface of metal.

KAZUOMI S, KAZUHIRO T, YASUHIRO Y, MAYUMI K, RYOTA Y, SATO K, TOKUNAGA K, YUZUHARA Y, KOSAKA M, YUGE R

Manufacturing metal-carbon composite useful for high thermal conductivity heat dissipation material, comprises synthesizing carbon material on porous catalyst surface, complexing metal and controlling porosity of metal-carbon composite.

LEE S H, HAJUNSEOK, RHO H K, RYU H S

Manufacturing graphene film used for manufacturing pellicle involves coating graphene with protective film, removing base material by wet etching with etching liquid and dissolving protective film using solvent having lower surface tension.

YANASE Y, YANASE M, LIANG L

Manufacture of separator used for polymer electrolyte fuel cell, involves forming graphene film on surface of stainless steel in film-forming apparatus at preset temperature by microwave plasma chemical vapor deposition method.

KUMAGAI M, YOSHINO I, UMENO M, UCHIDA H

Method for manufacturing graphene film used in electronic device, involves blowing source gas containing carbon-type gas from nozzle on surface of base material, and carrying out forced diffusion of radical.

SAKAKIDA H, KIM J H

Graphene film used for manufacture of composite for transistor, has wrinkle density of less than preset value.

AOTA N, AIDA H

Production of graphene used in semiconductor applications, involves forming catalyst metal film on substrate, which includes introducing carbons into catalyst metal film, heating catalyst metal film, and cooling catalyst metal film.

NISHIDE D, MATSUMOTO T, IFUKU R

Formation of nitrogen-doped porous graphene envelope for metal catalyst involves vaporizing organic precursor and nitrogen precursor, heating substrate particles in reactor, and supplying the precursors using carrier gas to reactor.

KIM H, JANG B, KWON G H, KIM H Y, JANG B Y

Manufacturing method of graphene laminated structure, involves setting film thickness of iron carbide film more than thickness of boron nitride layer.

OSHIMA H