国家/地区 美国（8） 中国（7） 日本（5） 韩国（3） 台湾（3）
IPC部 B（10）
IPC大类 C01（10）
IPC小类 C01B（10） C23C（9） B82Y（6）
B01J（3） H01L（2）
IPC C01B032/186（10）
发明人 LIU P（2）
公开年 2018（7） 2017（2）
申请年 2017（10）
专利权人

Composite electrode material for composite electrode used for lithium based battery comprises a core, and graphene nanowall or graphene-like carbon nanowall where graphene nanowall or graphene-like carbon nanowall grows on surface of core.

TZENG Y, PAN Y

Wiring for semiconductor device, includes first metal portion, multilayer graphene, and second metal portion which are interposed between conductive portions.

KATAGIRI M, SAITO T, SAKAI T, MIYAZAKI H

Manufacturing artificial graphite involves placing graphene film on surface of base, placing graphene film/base composite structure in reaction chamber and graphitizing carbon layer/graphene film/base composite structure in inert gas.

LIU P, ZHAO W, WANG J, JIANG K, FAN S

Manufacturing graphene film used for manufacturing pellicle involves coating graphene with protective film, removing base material by wet etching with etching liquid and dissolving protective film using solvent having lower surface tension.

YANASE Y, YANASE M, LIANG L

Alloy useful for graphene growth catalysis, comprises palladium, and gallium.

WANG Y, JIN M, YING R

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T

Preparing copper/graphene composite material involves using acetone, ethanol and de-ionized water for washing rolled copper foil, ultrasonic cleaning rolled copper foil with hydrochloric acid, and then cleaning copper foil.

ZHANG K, SONG R, LIU P, LI W, CHEN X, MA F, HE D, LIU X

Thermal treatment apparatus for high quality graphene synthesis, has catalyst metal film where outlet transferred from down direction diversion roller to winding roller are passed through feed roller in deposition chamber.

KIM Y K, YONG K K, KIM Y, KI K Y

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Continuous method for preparing film comprising graphene, involves advancing metal substrate having graphene-comprising layer out of processing chamber, and separating graphene-comprising layer to form film comprising graphene.

HARUTYUNYAN A, HARUTYUJAN A