国家/地区 美国（14）
IPC部 C（14） H（8） B（3）
G（2）
IPC大类 C23（14）
IPC小类 C23C（14） C01B（7） C30B（3）
H01J（3） B82Y（2） H01L（2）
H01M（2）
IPC C23C014/14（14）
发明人 KIM J（2） LEE J（2） LIN Y（2）
公开年 2021（4） 2015（2） 2017（2）
申请年 2016（4）  2020（3）  2013（2） 
专利权人

Producing octahedral transition metal dichalcogenides involves forming transition metal layer on substrate and injecting chalcogenide-containing gas onto the substrate together with plasma treatment.

VINIT K, KIM H U, LEE J, SEOK H, KIM T, KIM T S, SEOK H H, WOO K H, CANADEVINIT

Formation of film involves preparing substrate containing conductive film formed on base substrate, forming composite layer containing graphene layer, and electrically connecting conductive film with former film through composite layer.

NI Z, MATSUMOTO T, IFUKU R, YOU W

Depositing large-area graphene layer involves forming titanium layer on substrate by sputtering, and reducing titanium layer by spraying a reductant gas and a purge gas onto the titanium layer when it is moved in a first direction.

EOM J H, YOON S G, HAN J H, SONG C K, YOON D H, YOUN D H, GYU S

Article used for a fuel cell coated with a coating, comprises a base and a coating is applied on the surface, the coating includes a corrosion resistant layer and onto which an external layer is applied which has conductive characteristics.

SUN H, NAVABPOUR P

Surface-metalized fiber, yarn or fabric used in product e.g. blanket comprises fiber, fiber yarn or fiber fabric having surface, graphene layer having multiple graphene sheets and optional conducive filler bonded to surface, and metal layer.

LIN Y, LEE S, JHONG Y, ZHAMU A, JANG B Z

Sensor film, has flexible substrate which is attached to sensor film and composite electrode which comprises first portion that includes metal layer in graphene layer.

AHMED K, MAJHI P

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Depositing graphene-based layer on substrate by chemical vapor deposition using hydrocarbon, comprises forming plasma within vacuum chamber using magnetron containing target made of catalytically active metal, and sputtering.

WALD K, FAHLAND M, GUNTHER S, SCHILLER N, GUENTHER S

Copper substrate for growing graphene monolayer has second copper layer in contact with first copper layer, and has second copper percentage, second oxygen percentage and second average thickness.

YAGER T A, ROBINSON J

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S