国家/地区 中国（94）
IPC部 C（94）
IPC大类 C23（94）
IPC小类 C23C（94） C01B（20） C22C（12）
B22F（11） B32B（6） C30B（6）
H01L（6） H01B（5） H01H（5）
H01M（4） B05D（3） B21J（3）
B23K（3） C09K（3） C22F（3）
IPC C23C016/26（94）
发明人 MA Y（11） SHI H（9） DUAN Y（8）
LI X（8） SHAO L（8） SHEN H（8）
ZHANG Y（8） HUANG D（7） LI Z（7）
ZHANG X（7） LI Y（6） CAO H（5）
CHEN Q（5） LI J（5） MA J（5）
公开年 2022（94）
申请年 2022（51）  2021（33）  2020（10） 
专利权人 SHANGHAI XIN.（9） ZHEJIANG CHI.（9） CHINESE ACAD.（8） CHONGQING GR.（8）
BEIJING GRAP.（5） UNIV PEKING（5） CRRC IND RES.（4） CHANGZHOU SI.（3）
JIANGSU JIAN.（3） ANHUI AEROSP.（2） BEIJING GRAP.（2） BEIJING TECH.（2）
CHANGZHOU 2D.（2） CHINA NUCLEA.（2） SAMSUNG ELEC.（2） SONGSHAN LAK.（2）
UNIV CHINA E.（2） UNIV SOUTHWE.（2） ZHONGKE JING.（2）

Method for preparing metal-graphene composite material by using electronic component, involves preparing metal-graphene composite material by hot-pressing sintering, and applying pulse current to metal substrate to perform surface heat treatment to metal substrate.

WANG X, HUO Y, LI J, CAO Z, XIAO Z

Preparing copper-based graphene composite material comprises growing graphene film on surface of copper foil by chemical vapor deposition, stacking, using ultrasonic welding technology to weld stacked components, and removing stress and annealing welded stack assembly.

WANG E, WANG X, HE M, ZHANG R, ZHAO C, HU X, LIU K, FU Y

Preparing metal-based graphene composite material, comprises mixing graphene slurry and metal powder to form mixed slurry, and forming mixed slurry into metal-based graphene composite material by chemical vapor deposition in oxygen-free environment.

QIAN T, CAO H, SHEN H, LV X, MA Y

Preparing diamond/graphene/carbon nano-tube full-carbon base composite material, comprises e.g. plating diamond surface with catalytic layer, and using direct current injection plasma arc furnace to quickly heat diamond plated with layer.

CHEN L, LIU J, WEI J, YANG Z, LIU Y, YUAN X, ZHENG Y, REN F, LI C

Mechanical hand for film continuous graphene film continuous scale deposition device, has screw rod whose end is installed on driving device, and push rod slidably mounted on screw rod along length direction of screw rod.

XIE S

Growing single-layer graphene useful in semiconductor device involves fixing copper foil on cathode, placing in acidic electrolyte, applying voltage between working and counter electrodes, placing copper foil and growing single layer graphene on both sides of copper foil by chemical vapor deposition.

SHEN H, MA Y

Controllable preparation method of palladium-based hydrogen sensitive material, involves loading palladium nano-particles on graphene film by self-reduction deposition method at room temperature and immersing film on substrate in chemical plating solution.

LIU H, ZHANG P, LU Z, ZHANG J, CHEN Z, GUO J, YANG C, CHENG Q, LEI H, SONG T, LIN W, CAO C, CAO X, LIU M, PING X

Titanium carbide-yttrium oxide composite reinforced graphene-coated copper-based contact material comprises titanium carbide, yttrium oxide, tungsten, chromium, molybdenum, and graphene-coated copper.

LIU J, ZHANG Y, CHEN H, YU X, TAO Y, WANG J

Preparing metal/graphene/polycrystalline diamond film particle detector used in field of nuclear physics, comprises depositing layer of graphene on surface of patterned metal substrate as ohmic contact electrode layer and growing diamond film in situ on graphene, where metal substrate is copper foil.

XIONG Y, WANG B

Performing graphene copper composite material useful in transmission cable comprises performing chemical vapor deposition on copper powder under methane and reducing atmosphere to form graphene on surface of the copper powder hot-pressing and sintering first powder.

CHEN S, LIU J, CHI C, GAO J, PANG Z, ZHANG Q, CHEN B, HAN Y, ZHU Z, DING Y