国家/地区 中国（32）
IPC部 C（32）
IPC大类 C23（32）
IPC小类 C23C（31） C01B（7） C30B（4）
H01L（3） A61L（2） B05D（2）
G01N（2）
IPC C23C016/26（25） C01B032/186（5） C23C016/02（5）
C23C016/455（4） C23C014/24（3） C23C016/34（3）
C23C016/44（3） C23C016/458（3） C23C016/54（3）
C30B029/64（3） A61L031/08（2） C23C014/18（2）
C23C014/58（2） C23C016/50（2） C23C016/505（2）
发明人 LIU Z（19） PENG H（13） ZHANG J（7）
LIU K（5） LIU X（5） WANG K（5）
YU D（4） CHEN Z（3） CHENG Y（3）
FU Y（3） LI G（3） QI Y（3）
REN L（3） XU X（3） YANG H（3）
公开年 2021（8） 2018（7） 2019（5） 2022（5） 2023（2）
申请年 2019（6）  2021（6）  2020（5）  2017（4）  2016（3）  2018（3） 
专利权人 UNIV PEKING（32）

Preparing a metal wafer substrate involves forming metal thin film on the sapphire substrate by magnetron sputtering, and annealing under mixed atmosphere of hydrogen and argon.

PENG H, YANG Y, CAO Y, TANG J, YAN R, DU Y

Growing single crystal III-nitrides on ceramic substrate comprises e.g. depositing filling material on surface of ceramic substrate, grinding and polishing to obtain smooth surface, and/or forming aluminum-oxygen compound layer or two-dimensional material layer on surface.

GUO F, YANG H, CHEN Z, WU J, SHEN B, YANG X

Method for growing graphene wafer, involves depositing and growing graphene wafer on sapphire or metal substrate by vapor deposition, and arranging sheet above metal substrate, and sheet is parallel to plane of metal substrate.

WANG Y, TANG J, YAN R, DU Y

Heating furnace for use in chemical vapor deposition reaction device, has graphite plate supporting wafer substrate, where one side surface used for substrate is provided with growth graphene.

XUE Z, CHEN Z, SHAN J, WANG M, SUN J, LIU Z

Uniform gas mold for fiber graphene graphene, has uniform air channel respectively connected with air inlet hole and air outlet hole and used for conveying reaction gas to cloth fiber.

TU C, CHENG Y, QI Y, WANG K, LI J, LIU Z

Method for preparing high infrared element used in aerospace field, involves providing metal material, and graphene coating is obtained by chemical vapor deposition growth on surface of metal material.

YUAN H, CHENG Y, CHENG S, QI Y, WANG K, LIU Z

Method for metal protection used in e.g. metal anti-corrosion field in high power wire cable, and high temperature electromagnetic shielding involves providing metal material, and obtaining vertical graphene coating on the surface of metal material by plasma enhanced chemical vapor deposition.

LI J, CHENG Y, CHENG S, QI Y, WANG K, LIU Z

Device for preparing graphene by plasma enhanced chemical vapor deposition (PECVD), has first region of deposition furnace that is provided with overlapped portion, and second polar plate that is connected to grounding end of plasma source.

LIU Z, WU Q, CAO F, WANG X, WANG K, YANG H, PENG H

Graphene cold wall growth device, has power supply whose two poles pass through two through holes of reaction chamber, where two poles of power supply are connected with upper electrode plate and lower electrode plate.

CHEN Z, JI N, SHEN C, XU S, ZHANG J

Preparing clean double-layer and few-layer graphene film, comprises placing substrate in atmosphere containing first oxidizing gas, annealing, placing substrate in reaction mixed gas containing reducing gas, a carbon source and a second oxidation gas, and heating to growth temperature.

LI G, ZHANG Y, LIU X, ZHANG M, GAO X, ZHANG J, PENG H, LIU Z