国家/地区 韩国（12） 美国（11） 日本（8） 世界知识产权组织（6） 中国（4）
IPC部 B（17）
IPC大类 B01（17）
IPC小类 B01J（17）
IPC B01J023/755（17）
发明人 MATSUMOTO T（3） IFUKU R（2） KIM H（2）
SEO S（2） SEO S A（2） SEOK W J（2）
公开年 2013（3） 2016（3） 2012（2） 2014（2）
申请年 2012（6）  2016（3）  2020（2） 
专利权人 HANWHA TECHW.（3） SAMSUNG ELEC.（3） TOKYO ELECTR.（3） HANWHA AEROS.（2）
KOREA ADVANC.（2） SAMSUNG TECH.（2）

Metal catalyst layer used for producing graphene, laminated and crystallized on c-plane of substrate having corundum structure, having face-centered cubic structure.

NARUTSUKA S, NAKAJIMA R

Preparation of micro super capacitor used for manufacturing large integrated circuit, involves pretreating catalytic metal, preparing graphene, designing photomasking mask plate, preparing graphene microelectrode, and adding gel electrolyte.

NING J, FENG X, WANG D, ZHANG J, MU M, HAO Y

Production of graphene on metallic substrate for layered composite, involves depositing layer of carbon barrier material on metallic substrate, depositing layer of chemical vapor deposition catalyst and forming graphene on catalyst layer.

SINGH R, PATWARY S, BANERJEE P C

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T

Graphene-based laminate used in e.g. organic light emitting device, transistors, comprises substrate, graphene layer on substrate, and inorganic layer comprising fluorine-containing lithium compound, formed on graphene layer.

PARK C, CHO S, SEO S, SHIN S, PARK C H, CHO S M, SEO S A, SHIN S M

Formation of nitrogen-doped porous graphene envelope for metal catalyst involves vaporizing organic precursor and nitrogen precursor, heating substrate particles in reactor, and supplying the precursors using carrier gas to reactor.

KIM H, JANG B, KWON G H, KIM H Y, JANG B Y

Preparation of graphene-encapsulated metal nanoparticles used in e.g. LED, involves supplying preset mole ratio of gas comprising carbon dioxide, methane and water on metal catalyst and reacting and cooling resultant product.

SON I H, LEE S J

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K