国家/地区 日本（11）
IPC部 C（11）
IPC大类 C23（11）
IPC小类 C23C（11） C01B（7） H01L（7）
B32B（5） H01B（4） B82Y（2）
H01M（2）
IPC C23C014/06（11）
发明人
公开年 2021（3） 2013（2） 2016（2）
申请年 2013（2）  2018（2）  2020（2） 
专利权人 FUJITSU LTD（2）

Secondary battery e.g. lithium ion secondary battery used for portable electronic device, has hole transmission element that is sputtered film or vapor deposition film containing dielectric material, and is provided between electrodes.

NAKAJIMA J, DEGAWA A

Manufacturing semiconductor device involves heating second layer of first unit includes first layer, second layer, and third layer. The first layer includes support layer, second layer includes compound containing carbon.

MIGITA T

Graphene quantum dot apparatus for e.g., photoelectric conversion device, has substrate and graphene quantum dots on substrate, with each quantum dot having armchair-type first edge parallel to first direction and armchair-type second edge.

YAMAGUCHI J

Graphene laminated substrate for thermal radiation equipment, comprises graphene with equalized anisotropy, and amorphous carbon film or boron nitride film provided on each opposite surface perpendicular to lamination direction.

TATSUTA M, FUJIWARA K

Graphene nanoribbon used in a semiconductor device which his useful in electronic devices e.g. computers, smartphones, portable telephones and tablet terminals comprises a chiral edge to which an electron-withdrawing group is bonded.

OHTOMO M, OTOMO M

Producing highly conducting film of highly oriented conductor-bonded graphene sheets, useful in thermal management device, comprises e.g. preparing graphene dispersion having discrete graphene sheets dispersed in fluid medium.

ZHAMU A, JANG B Z

Method for growing gallium nitride/graphene-based magnetron sputtering aluminum nitride during manufacture of device, involves transferring monolayer graphene on aluminum oxide substrate, sputtering aluminum nitride, and heat-treating.

CHEN Z, HAO Y, ZHANG J, LV J, XU S, NING J, REN Z, WANG D, LIN Z

Manufacturing method of graphene laminated structure, involves setting film thickness of iron carbide film more than thickness of boron nitride layer.

OSHIMA H

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Manufacturing electrical conductor used in e.g. cables and printed circuit boards involves providing base substrate; providing foil; depositing graphene layer on foil to define layered structure; and depositing structure on base substrate.

MARTENS R I