国家/地区 韩国（18） 美国（14） 世界知识产权组织（11） 中国（5） 日本（5） 欧洲专利局（EPO）（3） 台湾（2）
IPC部 B（20）
IPC大类 B01（20）
IPC小类 B01J（20）
IPC C01B031/02（20） C23C016/26（14） C01B031/04（10）
B82Y030/00（8） B82Y040/00（8） B01J023/755（6）
B01J019/12（4） H01B001/04（4） B01J019/18（3）
B01J023/72（3） B01J019/08（2） B01J019/26（2）
B01J023/52（2） B01J023/75（2） B01J037/18（2）
发明人 KIM K H（3） HONG B H（2） LEE J（2）
SEOK W J（2） SONG Y（2） SONG Y I（2）
公开年 2013（10） 2012（8） 2014（2）
申请年 2012（20）
专利权人 HANWHA TECHW.（5） SAMSUNG TECH.（5） HANWHA AEROS.（3） SRC CORP（3）
UNIV SUNGKYU.（3） KOREA ADVANC.（2） SAMSUNG ELEC.（2） UNIV SUNGKYU.（2）

Graphene oxide useful in graphene-polymer composite used in coating liquid, for coating steel sheet.

YOO H, KIM J, JUNG Y, YOO H J, KIM J K, JUNG Y G, KIM J S, LIU H

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Device, useful for producing graphene for transistor, comprises chamber with space for processing substrate, substrate support, gas supply, light source, focusing unit, and unit for transferring formed graphene layer on substrate.

BYOUNG W J, BYUNG J C, SEOK W J

Preparing graphene used in e.g. memory device, comprises forming organic thin film on substrate, irradiating upper portion of organic thin film with radiation to cross-link organic thin film, and then carbonizing.

CHOI J H, JUNG C H, HWANG I T, KANG D W

Graphene dot structure to form network, useful to form electrode or conductive layer in lithium ion battery or hydrogen storage apparatus comprises core of semiconductor material, and shell of graphene formed on surface of core.

LEE E, CHOI B, LEE J, WHANG D, CHOI B L, LEE E K, LEE J H, WHANG D M

Manufacturing a metal wire, comprises forming graphene in a polymer layer surface and then irradiating, and coating a carbon source polymer on a metal wire or the board by spin coating, dip-coating or spray coating.

KIM S M, YUN K S, JUN S W, YUN K

Pre-processing method of catalyst metal layer during formation of graphene, involves activating catalyst metal layer by applying plasma of process gas containing reducible gas and nitrogen-containing gas to catalyst metal layer.

MATSUMOTO TAKASHI, MATSUMOTO T

Producing graphene, comprises forming structures on surface of face-centered cubic metal catalyst substrate having specified orientation, and supplying hydrocarbon to substrate.

KIM K H, MAENG K S, PARK C W, CHA S W, HONG S Y, HONG B H, JUNG M H, KIM K E, PARK S B, BEOM P S, EUN K G, HUI H B, HUI J M, HYEONG K G, SEOP M G, U P C, WON C S, YEON H S

Manufacture of graphene for, e.g. organic LEDs, involves preparing structure with graphene on surfaces and catalyst, arranging carriers on graphene, and removing catalyst while winding up carriers by rotating rolls facing each other.

KIM N, RYU J, YEONG K N, CHEOL R J, KIM N Y, RYU J C

Making graphene film comprises providing copper foil, placing foil in microwave plasma chemical vapor deposition chamber, evacuating chamber, providing hydrogen gas to chamber, exposing foil to plasma, and providing methane gas to chamber.

FISHER T S, KUMAR A