国家/地区 美国（10） 中国（9） 世界知识产权组织（7） 韩国（6） 欧洲专利局（EPO）（4） 日本（4） 台湾（3）
IPC部 C（17）
IPC大类 C01（17）
IPC小类 C01B（17）
IPC C23C016/458（17）
发明人 LI X（3） BOL A A（2）
公开年 2012（2） 2013（2） 2015（2） 2018（2） 2020（2） 2021（2） 2022（2）
申请年 2020（3）  2011（2）  2013（2）  2014（2）  2018（2） 
专利权人 INT BUSINESS.（2）

Preparing graphene film, comprises moving growth substrate in reaction chamber at predetermined speed under action of conveying mechanism along with supporting structure until reaction chamber is conveyed out.

GUO B, QU Y, TAN H, SHEN D, WANG W

Graphene film preparation device useful for heating in pipe, comprises heating element, which is embedded in the quartz tube and forming heating cavity with quartz tube, the heating cavity is placed by substrate, and air supply assembly forming graphene film on the substrate.

QING F, LI X, HE Q

Two-dimensional material forming apparatus comprises substrate moving unit, and two-dimensional material forming unit for forming two-dimensional material by spraying carbon gas on substrate moved by substrate moving unit.

SHIN U C

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Substrate used for preparing high-quality graphene, is made of iron-cobalt-nickel-copper alloy, and has thickness and surface roughness below preset value.

CAO N, LIU P, ZANG X, CAI K, WANG G, LI G

Sample support assembly for loading metal substrate to prepare graphene film, has connecting block whose end is fixedly connected with supporting block, where inner side of fixing block and plane section are formed with space for mounting metal substrate.

CAI J, HOU Y, CAI X

Method for generating graphene film, involves placing substrate for graphene film synthesis inside of quasi-enclosed substrate holder and generating graphene film on substrate through chemical vapor deposition.

BOL A A, LI X

Chemical vapor deposition device useful for batch preparation of graphene, comprises a furnace body, a furnace cover, an air inlet pipe, an air outlet pipe and a controller and the furnace cover arranged above the furnace body.

WANG H

Apparatus used to form graphene layer comprises reaction chamber containing support layer, heating element to heat the support layer, and control device configured to control the formation of graphene layer on surface of support layer.

BOUCHIAT V, CORAUX J, HAN Z

Susceptor has first fluoro polymer layer that is arranged on first surface of susceptor portion, and graphene layer is arranged on first fluoro polymer layer.

VISSER R J, JEONG S, DODABALAPUR A