国家/地区 美国（29） 韩国（21） 世界知识产权组织（19） 中国（17） 欧洲专利局（EPO）（14） 日本（10） 台湾（7） 德国（3） 澳大利亚（2） 英国（2） 新加坡（2）
IPC部 C（37）
IPC大类 C01（37）
IPC小类 C01B（37）
IPC C23C016/46（37）
发明人 WON D K（4） THOMAS S（3） GUINEY I（2）
JOUVRAY A（2） LEE J（2） TEO K B K（2）
VAN RIJN R（2） WON D（2）
公开年 2012（6） 2015（6） 2013（4） 2014（4） 2021（4） 2017（3） 2018（3） 2016（2） 2020（2）
申请年 2013（7）  2014（7）  2017（5）  2021（4）  2011（3）  2020（3）  2012（2）  2015（2）  2016（2） 
专利权人 SAMSUNG TECH.（4） HANWHA TECHW.（3） AIXTRON SE（2） KOREA INST S.（2）
PARAGRAF LTD（2） RIJKSUNIV LE.（2）

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Graphene film preparation device useful for heating in pipe, comprises heating element, which is embedded in the quartz tube and forming heating cavity with quartz tube, the heating cavity is placed by substrate, and air supply assembly forming graphene film on the substrate.

QING F, LI X, HE Q

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Base metal flake heating device for preparing graphene by chemical vapor deposition method comprises e.g. bottom plate, top plate, and support column provided between bottom side of the top plate and the bottom plate.

LIN Y

Production of electronic device such as integrated circuit board, involves providing substrate, supplying flow comprising precursor compound, selectively laser ablating graphene, and selectively laser ablating surface of substrate.

GLASS H, GUINEY I, TYLER M, WALLIS R, BAINES R, THOMAS S

Device used for producing graphene includes main heating unit, auxiliary heating unit, air supply unit, pressure reducing component, bottom plate, containing space, heating space and cavity body.

ZHANG J

Directly growing of carbon material in production of high-quality graphene, involves adsorbing carbons onto substrate by supplying carbons to substrate, and removing unreacted carbon residues from substrate after supplying carbons.

KIM C, SHIN H, BYUN K, SHIN K, LEE C, NAM S, AN S, LEE J, CHO Y, SHIN H J, BYUN K E, SHIN K W, LEE C S, NAM S G, AHN S J, LEE J H, LEE J I, CHO Y C

Formation of graphene layer on metal layer used in sensing applications, involves heating process chamber, introducing carbon including deposition gas into chamber and transporting precursors into metal layer.

GILLES OLLIVIER BORME J, LUIS MACHADO J, PEDRO DOS SANTOS HALL DE AGORR, BARBOSA QUEIROS R, JORGE PEIXEIRO DE FREITAS P

Manufacturing artificial graphite involves placing graphene film on surface of base, placing graphene film/base composite structure in reaction chamber and graphitizing carbon layer/graphene film/base composite structure in inert gas.

LIU P, ZHAO W, WANG J, JIANG K, FAN S