国家/地区 中国（12）
IPC部 C（12）
IPC大类 C01（12）
IPC小类 C01B（12）
IPC C01B031/04（10） C23C016/26（7） C01B032/182（4）
C23C016/44（4） B82Y030/00（3） B82Y040/00（3）
C01B031/02（3） C01B032/18（3） C01B032/186（3）
C23C016/01（3） C23C016/46（3） H01B013/00（3）
C01B032/15（2） C01B032/16（2） C03C017/22（2）
发明人
公开年 2015（6） 2014（4） 2016（2）
申请年 2014（12）
专利权人

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S

Metallic bipolar plate useful in electrochemical cell e.g. low- and high temperature polymer electrolyte fuel cells/electrolyzers, comprises electrically conductive graphene-like coating.

WEISSBECKER V, LEHNERT W, REIMER U, WEI SZLIG BECKER V, REINERT W

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Forming graphene, useful as e.g. electrical or thermal conductive substrate, comprises placing and heating a substrate within reaction chamber, introducing carbon precursor into chamber, and forming graphene layer on surface of substrate.

LIU X, MANLEY R G, MORENA R M, SONG Z

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H

Copper-based contact material used in low-voltage circuit breaker, contactor and relay, comprises graphene-enhanced copper foam including graphene and copper, where copper foam comprises oxide powder, carbide powder and copper powder.

LIN W, LIU L, WENG W

Synthesizing reduced graphene oxide on a substrate from seedlac, comprises preparing the seedlac solution in alcohol having specified carbons, dipping the substrate into the solution, and heating the substrate which is a metallic sheet.

SHYAM K C, MANISH K B, TAPAN K R, SUMITESH D, RANJAN K S, YASHABANTA N S, ASHIT K P, VIKAS C S, CHOUDHARY S K, BHADU M K, ROUT T K, DAS S, SAHU R K, SINGHBABU Y N, PRAMANICK A K, SRIVASTAVA V C

Composition, used in a phase change material which is useful e.g. as thermal conductivity substrate for flexible graphene electronic devices, as electrode in battery, and in a thermal storage device, comprises galactitol and mannitol.

DA SILVA A K, FLEMING E, SHI L, BIELAWSKI C W, RUOFF R S, WEN S, JI H, PETTES M, PAUL A, PAEK E, PAK A J, SELLAN D P, FLAMING E, DA SILVAA A K

Manufacture of graphene as base material for electronic circuits, carbon-based electronic device and electromagnetic device, involves forming metal layer on thermal expansion compensation substrate, and forming graphene on metal layer.

CHOI M, KIM T, MOON J, JUNG M, KIM T H

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y