国家/地区 欧洲专利局（EPO）（78）
IPC部 C（78）
IPC大类 C01（78）
IPC小类 C01B（78）
IPC C01B031/04（78）
发明人 CHIBA Y（5） VEERASAMY V（5） VEERASAMY V S（5）
CHIBA G（4） CHIBA YOSHIHIRO（3） YOSHIHIRO C（3）
ZENASNI A（3） BOINTON T H（2） CASTRO A H（2）
CHOE P（2） CHOI B（2） CHOI B L（2）
CRACIUN M（2） GROBERT N（2） HAQUE S（2）
公开年 2015（20） 2013（15） 2012（11） 2011（8） 2016（8） 2014（6） 2017（4） 2010（3）
申请年 2013（17）  2012（13）  2014（13）  2015（10）  2011（9）  2009（4）  2010（4）  2016（4）  2017（2） 
专利权人 GUARDIAN GLA.（5） GUARDIAN IND.（5） JX NIPPON MI.（5） NIPPON MININ.（5）
COMMISSARIAT.（4） GUARDIAN IND（4） NIPPON MININ.（4） CORNING INC（3）
SAMSUNG ELEC.（3） UNIV SINGAPO.（3） AIXTRON SE（2） BASF SE（2）
CENT NAT REC.（2） COMMISSARIAT.（2） GRAPHENE SQU.（2） ISIS INNOVAT.（2）
MAX PLANCK G.（2） NIPPON MININ.（2） NOKIA CORP（2） NOKIA TECHNO.（2）

Production method for producing graphene on copper substrate, involves continuously monitoring temperature of copper sheets and heating copper sheets to specified temperature for predetermined time using electromagnetic induction heater.

HABERLE TAPIA P, ORELLANA GOMEZ C, HABERLE T P, ORELLANA G C, HAEBERLE TAPIA P, HAEBERLE T P

Apparatus for continuous production of graphene, has rotatable substrate which is included with endless rotatable surface comprising material for accepting deposition of primary carbon layer prior to graphene growth.

ANDREASSEN JAKOBSEN M, DATSYUK V, JAKOBSEN M A

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Manufacture of gas sensor for nitrogen oxide, involves placing microheater platform substrate having graphene-covered surface, to chemical vapor deposition reactor, injecting inert gas, hydrogen and sulfur source gas, reacting and cooling.

LI T, GUO L, LIANG C, WANG Y

Manufacturing method of coated article with graphene-inclusive thin film, involves mechanically removing graphene on major surface of nickel layer and graphene initially formed at interface of silicon layer and nickel layer.

VEERASAMY V S, VEERASAMY V

Synthesizing graphene involves annealing substrate in hydrogen gas atmosphere, subsequently undertaking deposition and nucleation step where relatively thick carbon layer is deposited onto substrate, and undertaking graphene growth step.

BOINTON T H, BARNES M D, RUSSO S, CRACIUN M, HARDISTY BOINTON T

Doping method of graphene for manufacturing graphene composite electrode and graphene structure, involves forming precursor polymer layer for doping on substrate, and positioning graphene on substrate.

MOON J, PARK W, PARK S, JO I, HONG B, SAN MOON J, SU C I, BAE P W, BEOM P S, HUI H B, ZHENSHAN W, WONBAE P, SUBEOM P, INSU J, BYUNGHEE H

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K

Apparatus for manufacturing cell sheet, has graphene layer that is formed adjacently in electrode, and patterned electrode that is formed adjacently in support layer.

KIM D, CHOI S, HYEON T, KIM S, CHO H, CHO K, HONG C S, HWAN H T, HYEONG K D, JU K S, RIM C H, WON C G

Method for manufacturing conductive material in lubricant, involves attaching substrate layer to graphene layer, and providing second conductive material with substrate layer which is attached to graphene layer.

TREOSSI E, SCIDA A, PALERMO V, KHAN M A, SCIDAE A