国家/地区 韩国（77）
IPC部 C（77）
IPC大类 C01（77）
IPC小类 C01B（77）
IPC C01B032/186（77）
发明人 SHIN H（10） SHIN H J（10） BYUN K（9）
BYUN K E（9） LEE C（9） LEE C S（9）
SHIN K（9） SHIN K W（9） LEE E（6）
MATSUMOTO T（6） KIM C（5） CHO K（4）
HONG B H（4） IFUKU R（4） KIM S（4）
公开年 2021（14） 2015（7） 2023（7） 2014（6） 2016（6） 2017（6） 2012（5） 2013（5） 2020（5） 2022（5） 2018（4） 2011（3） 2019（2）
申请年 2021（9）  2014（8）  2016（8）  2019（8）  2020（8）  2022（7）  2012（6）  2013（6）  2015（5）  2010（3）  2011（3）  2017（3）  2018（2） 
专利权人 SAMSUNG ELEC.（13） TOKYO ELECTR.（6） UNIV SEOUL N.（4） CENT ADVANCE.（3）
GRAPHENE SQU.（3） HANWHA TECHW.（3） JX NIPPON MI.（3） NIPPON MININ.（3）
NIPPON MININ.（3） POSTECH ACAD.（3） SAMSUNG TECH.（3） UNIV CALIFOR.（3）
UNIV SUNGKYU.（3） AIXTRON SE（2） BASIC SCI IN.（2） CALIFORNIA I.（2）
CHARMGRAPHEN.（2） COMMISSARIAT.（2） HEIQ MATERIA.（2） LAM RES CORP（2）

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Flexible graphene thin film used for transparent electrode devices, comprises flexible substrate, titanium buffer layer grown on one side of flexible substrate by sputtering and graphene thin film layer grown in-situ in same equipment.

YOON S G, IREH H

Graphene interconnect structure useful for electronic device comprises first oxide dielectric layer including porous silicon oxide, or amorphous boron nitride, second oxide dielectric layer including aluminum oxide and graphene layer.

KIM C, BYUN K E, SHIN K W, LEE C S, BAEKWON P, PARK B, LEE C, SHIN K, BYUN K

Manufacture of wiring used in electronic device, involves growing graphene layer on substrate using plasma of hydrocarbon at specific temperature by plasma enhanced chemical vapor deposition, and doping graphene layer with metal.

LEE C, LEE M, SHIN H, BYUN K, KIM K, SHIN K, SHIN K W, KIM K B, BYUN K E, SHIN H J, HYUN L, LEE C S

Depositing graphene barrier film, involves placing substrate containing the titanium thin film layer into substrate processing system chamber forming processing space, supplying first reaction gas into chamber, supplying second reaction gas, and forming graphene layer on titanium thin film layer.

PARK J, LI J, JIN D, SUN W, KIM T, YIN Y, TIAN Z, BAK H, PARK J H, LEE K J, KIM D W, SUN W H, KIM T S, YOON W J, JEON J H, PARK H K, PARK H, JEONJINHO, YUN W J, WOO K D, LEE K

Manufacturing graphene useful in devices and laminate comprises growing graphene on single-crystal metal foil by supplying gaseous carbon source to single-crystal metal foil and exfoliating the graphene from single-crystal metal foil.

RUOFF R S, WANG M, DARUO

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Twin-chamber roll-to-roll graphene film manufacturing device useful for transparent display and flexible display having upper chamber with supply roller for supply catalytic metal film and winding roller for winding catalytic metal film.

KI K Y

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S