国家/地区 美国（17）
IPC部 C（17） H（10） B（7）
F（2） G（2）
IPC大类 C01（17）
IPC小类 C01B（17）
IPC C23C016/26（10） C01B032/186（6） C01B032/194（5）
C23C016/02（5） C23C016/44（5） C23C016/04（4）
B82Y030/00（3） C01B032/182（3） C23C016/32（3）
C23C016/34（3） C23C016/50（3） C23C016/56（3）
H01L021/02（3） B01J037/02（2） B82Y040/00（2）
发明人 BYUN K（2） BYUN K E（2） KIM S（2）
LEE C（2） LEE C S（2） LEE E（2）
SHIN H（2） SHIN H J（2）
公开年 2021（17）
申请年 2021（17）
专利权人 SAMSUNG ELEC.（2） UNIV SINGAPO.（2）

Structure e.g. porous metal-coated structure used for e.g. catalytic application, comprises substrate comprising activated adsorbent material, and metal material deposited on substrate.

PEPIN P, ETHRIDGE K, THOMSON C, HOLBROOK B, ESRIDGE K

Reactor assembly comprises gas inlet, gas outlets, reactor chamber, porous frits having porosity and comprising nanoporous carbon material, reactor head space, reactor assembly lamps, and computer processing unit.

NAGEL C J, BRODEUR C L

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Transistor pathogen virus detector for detection of SARS-COV2 virus, comprises substrate layer, silicon dioxide layer, nanocrystalline diamond layer, graphene oxide layer, fluorinated graphene oxide portions, and linker layer.

KOVI K K, SCHIRMANN E, KHAN A

Transparent electrode for photovoltaic cells, comprises transparent substrate and composite layer including graphene layer and nanoparticles that are embedded in graphene layer and extended through thickness of graphene layer.

ELSAYED K A M, MAAROUF A A

Semiconductor device e.g. monolithic three-dimensional integrated circuit, has microelectronic components embedded in single crystalline dielectric material, where material contains carbon with diamond structure or hexagonal boron nitride.

CLARK R D, CLARK R

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Transferring graphene involves forming graphene on first substrate, forming polymer precursor mixture on second substrate, providing graphene oppositely to second substrate having polymer precursor mixture.

GU T J, JANG W, SEO Y, WHANG D, WHANG D M, SEO Y M, JANG W S

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A