国家/地区 世界知识产权组织（9）
IPC部 C（9） H（5） B（4）
IPC大类 C01（9）
IPC小类 C01B（9）
IPC C23C016/26（6） C01B032/186（4） C01B032/182（3）
C23C016/44（3） H01L021/02（3） B01J037/02（2）
B82Y030/00（2） C01B032/194（2） C23C016/02（2）
C23C016/04（2） C23C016/32（2） C23C016/34（2）
C23C016/40（2） C23C016/455（2） C23C016/56（2）
发明人
公开年 2021（9）
申请年 2021（9）
专利权人 TOKYO ELECTR.（2）

Method for forming film e.g. graphene film on substrate, involves supplying aromatic hydrocarbon gas having functional group, to substrate on which base film is formed, and activating aromatic hydrocarbon gas adsorbed on surface of base film by plasma of reaction gas containing rare gas.

MATSUMOTO T, IFUKU R

Structure e.g. porous metal-coated structure used for e.g. catalytic application, comprises substrate comprising activated adsorbent material, and metal material deposited on substrate.

PEPIN P, ETHRIDGE K, THOMSON C, HOLBROOK B, ESRIDGE K

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Semiconductor device e.g. monolithic three-dimensional integrated circuit, has microelectronic components embedded in single crystalline dielectric material, where material contains carbon with diamond structure or hexagonal boron nitride.

CLARK R D, CLARK R

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Preparation of composite material with core-shell nanoparticles used as e.g. electrode in lithium battery, involves depositing ink comprising nanoparticles encapsulated in polymeric matrix on surface of substrate, and illuminating substrate covered with ink with pulsed light for dissociating carbon.

KASSEM O, RIEU M, VIRICELLE J, SAADAOUI M, OMAR K, MATHILDE R, JEANPAUL V, MOHAMED S

Continuously or semi-continuously producing graphene by introducing particles comprising core into stationary deposition chamber and subjecting to plasma enhanced chemical vapor deposition using carbon-containing gas to form solid graphene.

BEUKES J A, HUANG F

Formation of graphene layer used as material in e.g. flexible technologies, involves forming polymer layer on catalytic substrate by chemical vapor deposition of graphene precursor, and raising temperature to induce cyclodehydrogenation.

SINITSKII A, TORRES A, LI G