国家/地区 中国（14） 韩国（8） 美国（6） 世界知识产权组织（6） 欧洲专利局（EPO）（3） 俄罗斯（3） 日本（2） 台湾（2）
IPC部 C（27） B（10） H（8）
G（2）
IPC大类 C23（27）
IPC小类 C23C（27）
IPC C23C016/448（27）
发明人 BOYKO E V（3） KOSTOGRUD I A（3） LI X（3）
MATOCHKIN P E（3） SMOVZH D V（3） DUAN Y（2）
GAO X（2） GU W（2） HUANG D（2）
LI Z（2） LIU B（2） SHAO L（2）
SHI H（2） ZHANG Y（2） ZHENG K（2）
公开年 2021（7） 2020（5） 2022（3） 2012（2） 2015（2） 2016（2）
申请年 2019（6）  2020（5）  2016（4）  2022（4）  2011（3） 
专利权人 AS SIBE KUTA.（3） BEIJING GRAP.（2） CHINESE ACAD.（2） CHONGQING GR.（2）
POSTECH ACAD.（2） SAMSUNG ELEC.（2）

Plasma deposition of material onto two dimensional layer of first substrate, involves depositing protective layer directly onto dimensional layer by pulsed plasma deposition process, and depositing second layer onto protective layer by second plasma deposition process.

RIAZIMEHR S, KNOOPS H, SUNDARAM R

Acetylene fluid supply package for use in fabricating a semiconductor device, has pressure vessel, porous filler in the pressure vessel, improved solvent within the porous filler, where solvent solubilizing with acetylene absorbed within the improved solvent, improved solvent is triethyl phosphate.

HAN Y, CHUNG W, CHO Y, KANE W S, SONG X, SINHA A K, CHO Y J

Preparation device of metal layered graphene on solid carbon source, has heat compression chamber that is provided with auxiliary gas path mechanism introducing auxiliary gas into sample chamber, growth chamber and compression chamber.

SHAO L, LI X, ZHANG Y, LI Z, HUANG D, SHI H, DUAN Y

Preparing graphene metal layered composite material useful in aerospace industry, aviation industry and information industry, comprises pre-treating solid carbon source, growing graphene on many metal substrates and hot-pressing many graphene metal substrates.

SHAO L, LI X, ZHANG Y, LI Z, HUANG D, SHI H, DUAN Y

Chemical vapor deposition device for preparing graphene film, has vacuum monitoring unit for controlling and detecting vacuum degree of reaction unit, and carbon source feeding unit comprising atomizer and vaporizer.

GAO X, SHAN J, LIU B, ZHENG K, GU W

Chemical vapor deposition device for realizing continuous growth of graphene film on surface of graphene glass, comprises reaction unit for generating thin film on substrate by chemical vapor deposition reaction, and bearing panel.

GAO X, ZHENG K, LIU B, GU W

Method for production of atomic bilayer nanotape, involves oxidizing portion of monolayer to provide oxidized portion, and removing oxidized portion to provide atomic layer nanotape comprising transition metal dichalcogenide material.

HARUTYUNYAN A R, LI X

Forming silicon carbide coating layer by chemical vapor reaction process, comprises placing metallic silicon powder on bottom of chamber, positioning carbon-containing material, and raising and maintaining temperature inside chamber.

LIMKWANGHYUN, SHIN I C, LIM B J, CHO N C, PARK J G, LEE H, LEE J

Graphene coated metallic material product includes metal products with graphene coat covering the surface along the outer shape of the metal product, where graphene coat is formed by thermal chemical vapor deposition method.

HWANG C C, CHUNG D S, OH D

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I