国家/地区 中国（48） 美国（33） 世界知识产权组织（29） 日本（26） 韩国（20） 欧洲专利局（EPO）（17） 台湾（11） 印度（5） 英国（4） 西班牙（3） 墨西哥（3） 俄罗斯（3）
IPC部 C（81）
IPC大类 C23（81）
IPC小类 C30B（81）
IPC C30B029/02（81）
发明人 WANG H（5） ZHANG Y（5） AIDA H（4）
AOTA N（4） BI H（3） DIXON S（3）
GUINEY I（3） JIN H（3） LI Z（3）
LIU Z（3） PENG P（3） SHI H（3）
VEERASAMY V（3） VEERASAMY V S（3） WU T（3）
公开年 2022（11） 2017（10） 2012（9） 2014（8） 2016（7） 2011（6） 2015（6） 2021（6） 2018（4） 2020（4） 2023（4） 2013（3）
申请年 2016（12）  2012（9）  2022（9）  2020（8）  2021（8）  2013（7）  2015（7）  2011（5）  2014（5）  2017（4）  2009（3）  2010（2） 
专利权人 SHANGHAI INS.（6） NAMIKI SEIMI.（4） GUARDIAN GLA.（3） GUARDIAN IND（3）
GUARDIAN IND.（3） NIPPON MININ.（3） PARAGRAF LTD（3） CHANGZHOU ER.（2）
CHINESE ACAD.（2） CHONGQING GR.（2） DOKURITSU GY.（2） JX NIPPON MI.（2）
NAT INST ADV.（2） PENG P（2） UNIV NAT DEF.（2） WUXI GEFEI E.（2）

Preparing single crystal graphene/two-dimensional cuprous telluride heterojunction surface-enhanced Raman spectroscopy substrate useful in surface-enhanced Raman spectroscopy, comprises etching copper film on single-crystal graphene, heating in tellurium source and molecular sieve and reacting.

CHANG K, HUANG M, WANG H, CHEN K

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Electrical connection component for e.g. electric contact, comprises base material and nanocarbon material film composed of graphene laminated material formed by laminating two layers of graphene single layer materials.

KITANO A, SHIMIZU T, KUBO T

Preparing quantum resistance chip based on graphene, involves providing silicon carbide substrate, annealing silicon carbide substrate, performing epitaxial growth on surface of substrate by using chemical vapor deposition method by using silicon ethane as gas catalyst and acetylene.

XIAO X, CHEN L, KONG Z, WANG H

Preparing single crystal domain and polycrystalline domain graphene useful in technical field of basic research and graphene, comprises heating graphene film under an air atmosphere and annealing.

ZHENG Q, MA M, HUANG J, YU Z, HE Y

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN