国家/地区 美国（30） 世界知识产权组织（20） 中国（17） 韩国（16） 欧洲专利局（EPO）（15） 日本（11） 台湾（9） 印度（4） 西班牙（3） 墨西哥（3） 俄罗斯（3） 英国（2）
IPC部 C（34）
IPC大类 C01（34）
IPC小类 C01B（34）
IPC C01B031/04（34）
发明人 ZHANG Y（4） VEERASAMY V（3） VEERASAMY V S（3）
ZHANG K（3） CASTRO A H（2） CHIBA Y（2）
CHIBA YOSHIHIRO（2） DENG P（2） DING G（2）
GUO H（2） LEI T（2） XIE X（2）
公开年 2012（7） 2015（6） 2011（5） 2013（5） 2014（4） 2016（3） 2009（2） 2017（2）
申请年 2013（7）  2012（6）  2011（5）  2014（5）  2009（3）  2015（3）  2016（3） 
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3） NIPPON MININ.（3）
SHANGHAI INS.（3） CHINESE ACAD.（2） DING G（2） JX NIPPON MI.（2）
UNIV SINGAPO.（2） UNIV XIDIAN（2） XIE X（2） ZHANG K（2）
ZHANG Y（2）

Transfer-free method for forming high-quality graphene layer on graphene electrode, involves depositing titanium layer on base substrate by sputtering process, and growing graphene on deposited layer by chemical vapor deposition process.

YOON S, PARK B, YOON S G, PARK B J

Synthesis of Q-carbon, graphene and diamond used as e.g. nanodots, involves depositing amorphous carbon on substrate, melting amorphous carbon into undercooled state and quenching melted amorphous carbon from undercooled state.

NARAYAN J

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Synthesizing graphene involves annealing substrate in hydrogen gas atmosphere, subsequently undertaking deposition and nucleation step where relatively thick carbon layer is deposited onto substrate, and undertaking graphene growth step.

BOINTON T H, BARNES M D, RUSSO S, CRACIUN M, HARDISTY BOINTON T

Method for growing two-dimensional crystals e.g. graphene, involves heating crystal-growing furnace to enable reaction gas to react on stacked substrate, and forming two-dimensional crystal on surface of sub-substrates in stacked substrate.

HSIEH Y, HOFMANN M, CHIU Y

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Selection of qualified region of chemical vapor deposited graphene film during fabrication of microelectronics, involves heating chemical vapor deposited graphene film formed on metal substrate using reaction gas, and removing defect.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z