国家/地区 印度（10）
IPC部 C（10）
IPC大类 C23（10）
IPC小类 C23C（10）
IPC C30B029/02（5） B82Y030/00（4） B82Y040/00（4）
C01B031/02（4） C01B031/04（4） H01L021/02（4）
C23C016/02（3） C23C016/26（3） C30B025/18（3）
B82B003/00（2） C01B032/182（2） C01B032/188（2）
C23C016/56（2） C23C028/00（2） C30B025/02（2）
发明人 VEERASAMY V（3） VEERASAMY V S（3）
公开年 2011（3） 2021（2） 2022（2）
申请年 2009（2）  2020（2）  2021（2） 
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3）

Depositing gate dielectric on two-dimensional material involves depositing seed layer over atomically smooth surface of two dimensional material, evaporating predefined thickness of seed layer from atomically smooth surface, and performing atomic layer deposition.

SHRIVASTAVA M, KHANEJA M, MEERSHA A

P-type transparent conductor with highly reduced graphene oxide thin film, has substrate and highly reduced graphene oxide thin film deposited on the substrate, in which the film is directly grown on substrate by pulsed laser deposition.

RAO R M S, JUVAID M M, SARKAR S, VENKATESAN T

Synthesizing two-dimensional transition metal oxide layers by providing sputter chamber having inert atmosphere, depositing transition metal on substrate in sputter chamber, withdrawing substrate from chamber, placing substrate on pre-heated plate, and placing target substrate on ceramic plates.

DASH J K, ABZAL S M, KALYAN K, JANGA S L

System for growing crystalline material, has optical emission spectrometer (OES) that controls parameter in closed loop and maintains required proposition of plasma constituent for growth of crystalline materials in microwave plasma reactor.

SHARDA T, BHANDARI R, RAJNEESH B, TARUN S

Composition of article used for solar cell, comprises sapphire, silicon, gallium oxide or specific group semiconductor substrate, and intermediate specific group semiconductor layer, graphene layer, holes, and nanowires or nanopyramids.

MUNSHI M, WEMAN H, DHEERAJ D L, FIMLAND B M, VIGEN L, BARRIET D, PIMLANDBJOERNOBEEM, WIGGENREIDULPH, DAVID B

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Applying graphene coating to a substrate containing iron or aluminum, comprises providing metallic layer on a surface of substrate, and contacting metallic layer with a source of carbon atoms to provide a graphene coating on metallic layer.

KINLOCH I, LEWIS A, KING M, LEVIS A

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Manufacture of graphene thin film used in metal oxides window electrodes for solid-state solar cells involves disposing catalyst thin film on back support substrate, introducing hydrocarbon, and heating to promote graphene growth.

VEERASAMY V S, VEERASAMY V