国家/地区 中国（14）
IPC部 C（14）
IPC大类 C23（14）
IPC小类 C23C（14） C30B（2）
IPC C23C016/26（9） C23C016/44（4） C23C016/02（3）
C23C016/455（3） C23C016/54（3） C23C016/30（2）
C30B029/02（2）
发明人 ZHANG Y（14）
公开年 2017（14）
申请年 2017（7）  2016（5）  2015（2） 
专利权人 CHONGQING GR.（6） SHANGHAI INS.（5）

Rolled graphene continuously growing device comprises discharging cooling cavity, vacuum pump, graphene growth substrate feeding roller, cooling zone guide roller, high temperature processing chamber, heater, and transition cavity.

DUAN Y, HUANG D, LI X, LI Z, SHI H, WU J, YU J, ZHANG Y

Multi-station graphene fast growing device comprises fixing platform, vacuum pump, gas conveying pipeline, heating device, graphene growth processing cavity, sealing flange, vacuumizing port, air inlet, vacuum pump, and mobile device.

DUAN Y, HUANG D, LI H, LI Z, SHI H, WANG Z, WU J, YU J, ZHANG Y

Heat insulation device of graphene thin film growing device, has upper uniform thermal baffle provided with ventilation hole, annular lug boss, inner ring, lower uniform thermal baffle, flange, rotating plate and rotating locking plate.

DUAN Y, HUANG D, LI X, LI Z, SHI H, WU J, YU J, ZHANG Y

Preparation of composite film involves preparing diamond film on substrate, growing layer of nickel thin film on diamond film surface, heating, heat-preserving, cooling, depositing carbon on surface to be recrystallized to form graphene.

SHEN Y, MA G, YU S, HEI H, HE Z, TANG B, GU Y, ZHANG Y

Preparing copper substrate based on cleaning process for manufacturing chemical vapor deposition graphene, involves providing copper substrate for preparing graphene, and then treating copper substrate in aerobic environment.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Dry cleaning of copper substrate for preparing chemical vapor deposited graphene, involves subjecting copper substrate to aerobic atmosphere for oxidation to form oxide layer and removing oxide layer from surface of substrate.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Rolled graphene continuously growing device comprises a discharging cooling cavity, a cooling cavity and a vacuum pump for vacuumizing, where the discharging cooling cavity is provided with graphene growth substrate feeding roller.

DUAN Y, HUANG D, LI X, LI Z, SHI H, WU J, YU J, ZHANG Y

Multi-station graphene rapid growth apparatus, has fixed platform that is provided with heating device moving device for moving heating device from outside of process chamber outer tube to outside of other process chamber outer tube.

DUAN Y, HUANG D, LI H, LI Z, SHI H, WANG Z, WU J, YU J, ZHANG Y

Growing of graphene with unbonded metal, involves depositing oxide on one surface of metal foil, defining other surface as metal surface, and stacking or rolling up metal foil on oxide surface towards metal surface.

YU G, ZHANG Y, SUI Y, CHEN Z, DENG R, GE X, LIANG Y, HU S

Growth method of transition metal chalcogenide two-dimensional material-graphene heterostructure used in microelectronic device, involves heating substrate, dissolving carbon source on surface of substrate and heating source materials.

YU G, WU T, XIE X, SHI Z, CHEN J, ZHANG Y, SUI Y, CHEN Z