国家/地区 美国（12） 中国（11） 韩国（7） 世界知识产权组织（6） 加拿大（2）
IPC部 C（31）
IPC大类 C23（31）
IPC小类 C23C（28） C01B（10） C09D（4）
C23F（4） C25D（4） H05K（4）
F28F（3） H01L（3） B08B（2）
B22F（2） B32B（2） B82B（2）
B82Y（2） C08J（2） C22C（2）
IPC C23C016/26（16） C01B032/186（5） C23C014/06（4）
C01B032/194（3） C09D005/08（3） C09D149/00（3）
C09D163/00（3） C09D175/02（3） C09D175/04（3）
C23C014/14（3） C23C016/02（3） C23C016/04（3）
C23C016/455（3） C23C016/56（3） C23C018/16（3）
发明人 JANG B Z（7） LIN Y（7） ZHAMU A（7）
LEE S（5） CHIU W Y（3） MENG F（3）
CHEN J（2） JHONG Y（2） JIN J（2）
LI C（2） LI L（2） LI S（2）
公开年 2019（31）
申请年 2018（31）
专利权人 NANOTEK INST.（7） UNIV PEKING（2） XICHI TECHNO.（2）

Preparing sub-10 nano-stable graphene quantum dot involves placing boron nitride on a metal foil substrate, etching nano-holes on the boron nitride with a helium ion microscope, and using a chemical vapor deposition method.

LIU K, CHEN D, QIAO R, YU D

Preparing graphene film comprises forming a passivation layer on metal substrate, forming hole in passivation layer, forming a graphene film on a hole exposing the metal substrate and covering passivation layer by graphene film.

TIAN X, HE Y, ZHAO G, LI L, MENG Y, GUO T

Cleaning method of graphene comprises rolling the surface of graphene through curved body provided with adsorbent on curved surface.

LIU Z, PENG H, SUN L, LI Y, LIU X, LIN L, ZHANG J, JIA K

Graphene laminate useful in organic electronic device e.g. organic thin film transistor, organic solar cell, varistor and organic memory device, comprises substrate, interfacial adhesion layer and graphene layer.

CHO K W, LEE E

Large area graphene preparation device has second heater installed below chamber, and vacuum cover that surrounds furnace, first heater and second heater and is connected to vacuum unit to form vacuum around furnace.

JIN J

Large area graphene preparation device comprises e.g. a mainframe part i.e. mounted on upper part of the main machine part, where one side is connected with the gas inlet, and box furnace is connected to vacuum unit on the other side.

JIN J

Production of low-temperature growing graphene used for semiconductor application, involves placing substrate, providing carbon precursor, generating plasma, and removing carbon atom and cobalt layer which is annealed after deposition.

CHEN Z, ZHANG S

Graphene-based coating suspension comprises graphene sheets each having two opposed parallel surfaces, where thin film coating has anti-corrosive pigment or sacrificial metal coated on and covering two parallel surfaces.

MENG F, LIN Y, LEE S, CHIU W Y, ZHAMU A, JANG B Z

Inhibition of corrosion of structure/component having surface, e.g. marine structure, involves coating surface with suspension comprising graphene sheets coated with anti-corrosive pigment/sacrificial metal, resin binder and liquid medium.

MENG F, LIN Y, LEE S, CHIU W Y, ZHAMU A, JANG B Z

Method for directly synthesizing graphene on surface of target object, involves forming non-metal layer on support substrate, disposing target object in space above support substrate, and injecting carbon precursor to form graphene.

SONG Y, UDDIN M S, PARK J, PARKJAEHYUN