国家/地区 日本（11）
IPC部 B（11）
IPC大类 C23（11）
IPC小类 C23C（11） B82Y（9） C01B（9）
B05D（6） H01L（6） B32B（4）
B01J（3） B44C（2） H01B（2）
IPC B82Y030/00（8） C01B031/02（8） C01B031/04（8）
C23C016/26（8） B82Y040/00（7） C01B032/186（3）
B05D003/02（2） B05D007/14（2） B32B009/00（2）
B32B015/04（2） C01B032/184（2） C23C016/02（2）
C23C016/56（2） H01L021/02（2） H01L021/20（2）
发明人 BAE S K（2） CHUNG H（2） CHUNG H J（2）
HEO J（2） HEO J S（2） HUH J（2）
HUH J S（2） JUNG H（2） JUNG H J（2）
KANG S（2） KANG S R（2） SEO D（2）
SEO S（2） SEO S A（2） WOO Y（2）
公开年 2011（9） 2010（2）
申请年 2010（11）
专利权人 JAPAN SCI TE.（2） SAMSUNG ELEC.（2） UNIV SUNGKYU.（2）

Graphene roll-to-roll coating apparatus useful for graphene roll-to-roll coating, and for coating a metallic member, comprises a first roller, a pre-treating unit, a graphene forming unit, and a second roller.

BAE S K, CHOI J, HONG B H, KANG J, KIM H K, KIM Y J, YAN J K

Applying a coating composition on substrate comprises preparing a coating by mixing carbon in form of carbon nanotubes, graphene and/or fullerenes with metal particles and two-dimensionally or selectively applying the coating on substrate.

ADLER U, RODE D, BURESCH I, WANG J, FRECKMANN D, SCHMIDT H, ROHDE D, WANG Y

Method of transferring larger-sized graphene used in electric circuit, involves removing adhesive and protection layers from graphene layer respectively.

BAE S, CHUNG H, HEO J, JUNG M, KANG S, SEO D, SEO S, WOO Y, BAE S K, CHUNG H J, HEO J S, JUNG M H, KANG S R, SEO S A, WOO Y S, JUNG H J, HUH J S, YEO R, HUH J, JUNG H

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H

Electrically activating a structure having graphene layers formed on a silicon carbide layer comprises subjecting the structure to an oxidation process.

MCFEELY F R, YURKAS J J, OIDA S, HANNON J B

Graphene film for composite complex contains several graphene domains each having specified area.

AGO HIROKI, ITO YOSHITO, TANAKA IZUMI, MIZUNO SEIGI, TSUJI MASAHARU, AGO H, ITO Y, TANAKA I, MIZUNO S, TSUJI M, MIZUNO K

Substrate for fabrication of semiconductor element, has graphene layer formed by chemical vapor deposition using metal catalyst, compound or alloying layer and oxide layer for diffusing metal catalyst sequentially formed on metal layer.

HIURA H, TSUKAGOSHI K

Manufacture of graphene thin film used in metal oxides window electrodes for solid-state solar cells involves disposing catalyst thin film on back support substrate, introducing hydrocarbon, and heating to promote graphene growth.

VEERASAMY V S, VEERASAMY V

Producing graphene, comprises introducing a solution of a metal alkoxide in a solvent into a decomposition apparatus, which includes a first region having a high temperature to cause thermal decomposition of the metal alkoxide.

COLEMAN K S

Manufacture of graphene film used for manufacture of electronic device, involves contacting amorphous carbon film with metals chosen from gallium, indium, tin and antimony.

FUJITA JUNICHI, FUJITA J I, FUJITA J