国家/地区 韩国（46）
IPC部 C（46）
IPC大类 C01（46）
IPC小类 C01B（46）
IPC C01B031/02（43） C23C016/26（31） C01B031/04（13）
B82Y030/00（12） B82Y040/00（12） C23C016/06（7）
H01B001/04（6） C01B032/186（5） C23C016/02（5）
B01J019/08（4） C23C016/44（4） B01J019/12（3）
B01J023/755（3） B32B009/00（3） C23C016/00（3）
发明人 JUNG M（3） KIM K H（3） SEO B（3）
BYUNG J C（2） CHIBA G（2） CHIBA Y（2）
CHOI I S（2） CHOI J Y（2） HONG B H（2）
LEE K J（2） LEE Y H（2） MOON J（2）
NA D H（2） RHO J（2） SHIN H J（2）
公开年 2013（46）
申请年 2012（26）  2011（13）  2013（7） 
专利权人 KOREA ADVANC.（5） UNIV SUNGKYU.（5） LG ELECTRONI.（3） SAMSUNG ELEC.（3）
SAMSUNG TECH.（3） SRC CORP（3） UNIV SUNGKYU.（3） HANWHA AEROS.（2）
HANWHA TECHW.（2） JX NIPPON MI.（2） KOREA ADV IN.（2） NIPPON MININ.（2）
NIPPON MININ.（2） UNIV CHUNGAN.（2） UNIV SUNGKYU.（2）

Chemical vapor deposition system used for manufacturing graphene, comprises cooling portion which cools grapheme, graphene combiner which synthesizes graphene by chemical vapor deposition, and material supply portion.

NA D H

MManufacturing three-dimensional structure of graphene useful in flexible display, comprises preparing mold, forming graphene layer on mold, forming support structure for covering first and second sides on graphene layer, and removing mold.

LEE S, BYUN N, JUNG M, LEE D, SEO B

Graphene film, useful in a LCD element and electronic paper display device, comprises self-assembled monolayer formed on substrate, and graphene oxide thin films formed on self-assembled monolayer.

HWANG J O, KIM S O

Film-forming apparatus for forming graphene film on film-forming target e.g. metallic foil, has roll-to-roll mechanism which provides tensile force relaxation unit that relaxes tensile force applied to transported film-forming target.

KOBAYASHI T, SHIMIZU K, KADONO K, MIZUGUCHI Y, MURAKAMI Y, MIZUKUCHI Y, SUMINO K

Device, useful for producing graphene for transistor, comprises chamber with space for processing substrate, substrate support, gas supply, light source, focusing unit, and unit for transferring formed graphene layer on substrate.

BYOUNG W J, BYUNG J C, SEOK W J

Graphene patterning method involves adhering two different substrates, coating graphene oxide on upper substrate and then forming patterned bonding layer on graphene oxide-coated substrate.

CHANG S T, KIM N H

Manufacture of graphene involves coating graphene oxide solution on substrate, drying coated graphene oxide solution on substrate, forming graphene oxide flakes, and growing graphene.

RHO J, PARK W, JUNG M, SEO B, MOON J

Manufacture of boron-doped reduced graphene oxide used for electrode of capacitor, involves dispersing graphene oxide into aqueous solvent, adding borane-tetrahydrofuran to obtained dispersion solution, then refluxing, and cooling.

PARK S, HAN J W

Plasma process apparatus used to process e.g. graphene used in the fabrication of transistor, comprises reactor comprising electrode portions to feed constant high voltage for plasma discharge reaction generated in processing channel.

KIM S, YONG D K, BYUNG G S, SUN Y C, MYOUNG S S, BYUNG H K, KYU H L, MOON W L

System, used to prevent corrosion of metals e.g. lithium, comprises a graphene layer formed on a metallic layer, where the metallic layer including a first metal and a second metal that are dipped in a metal solution.

CHAE S J, CHOI J Y, FETHULLAH G, LEE Y H, SHIN H J, YAO F