国家/地区 日本（16）
IPC部 C（16） B（12） H（7）
A（2）
IPC大类 C01（16）
IPC小类 C01B（16） C30B（16） C23C（12）
B82Y（7） H01L（5） B01J（4）
B32B（3） H01B（3） B01D（2）
B82B（2） C22C（2）
IPC C01B032/186（16）
发明人 WANG H（2） XIE H（2） XIE X（2）
公开年 2017（3） 2011（2） 2015（2） 2021（2） 2022（2） 2023（2）
申请年 2015（2）  2016（2）  2020（2）  2021（2）  2022（2） 
专利权人 SHANGHAI INS.（2）

Producing multilayer graphene, involves synthesizing multilayer graphene from carbon source using iron-chromium alloy film as catalyst.

HAYASHI K, KONDO O

Electrical connection component for e.g. electric contact, comprises base material and nanocarbon material film composed of graphene laminated material formed by laminating two layers of graphene single layer materials.

KITANO A, SHIMIZU T, KUBO T

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Membrane for providing selective permeability in filtration applications, comprises sheet of graphene-based material having perforations with specified pore size, non-graphenic carbon-based material, and contact areas between materials.

SWETT J L, BEDWORTH P V, HEISE S E, SINTON S W, SIMON S M, BULLOCK S E, LIU H, SINSABAUGH S L

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M