国家/地区 美国（16） 世界知识产权组织（11） 韩国（10） 中国（8） 欧洲专利局（EPO）（8） 日本（8） 台湾（5） 法国（2） 英国（2） 印度（2）
IPC部 B（18）
IPC大类 C30（18）
IPC小类 C30B（18） H01L（18） B82Y（14）
C01B（13） C23C（8） B32B（7）
B82B（4） H01B（3） B05D（2）
C23F（2） C25D（2）
IPC H01L021/02（18）
发明人 BERRY V（2） SEACRIST M R（2）
公开年 2013（7） 2011（2） 2014（2）
申请年 2012（6）  2009（2）  2013（2）  2014（2）  2020（2） 
专利权人 MEMC ELECTRO.（2） SUNEDISON SE.（2） UNIV KANSAS .（2）

Composition of article used for solar cell, comprises sapphire, silicon, gallium oxide or specific group semiconductor substrate, and intermediate specific group semiconductor layer, graphene layer, holes, and nanowires or nanopyramids.

MUNSHI M, WEMAN H, DHEERAJ D L, FIMLAND B M, VIGEN L, BARRIET D, PIMLANDBJOERNOBEEM, WIGGENREIDULPH, DAVID B

Manufacturing substrate material useful for graphene growth, comprises e.g. cutting sapphire crystal, forming sapphire plate blank, grinding sapphire sheet blank to form sapphire sheet semifinished product, and chamfering sapphire sheet.

ZHOU Z, YANG L, SHI M, LI Z

Manufacture of graphene-based device used for e.g. gas sensor, involves providing graphene assembly, transferring graphene assembly to substrate, using photolithography and removing UV barrier layer and photoresist layer.

MIGLIORATO M, KUMAR R, MONTEVERDE U

Manufacturing multilayer graphene e.g. suspended or deposited multilayer graphene used for device e.g. sensor involves depositing graphene monolayer having protective layer on top on sample containing another graphene monolayer.

ZURUTUZA ELORZA A, CENTENO PEREZ A, PESQUERA RODRIGUES A, ZURUTUZA E A, CENTENO P A, PESQUERA R A

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Functionalizing epitaxial graphene sample surface for atomic layer deposition of dielectric in reactor, involves subjecting sample to ex situ functionalization step and sample having hydroxyl-terminated surface to in situ treatment cycle.

GARCES N, WHEELER V D, GASKILL D K, EDDY C R, JERNIGAN G G

Manufacture of graphene laminated structure used for electronic device, involves plasma-treating surface of hexagonal boron nitride sheet, depositing hexagonal boron nitride sheet on graphene sheet, and forming insulating layer.

KIM S, HAN S, HAN S A, KIM S W

Epitaxial structure comprises substrate having patterned epitaxial growth surface defining grooves, graphene layer covering patterned epitaxial growth surface, and epitaxial layer on patterned epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T