国家/地区 美国（10） 世界知识产权组织（7） 欧洲专利局（EPO）（6） 韩国（6） 中国（5） 日本（4） 台湾（2）
IPC部 C（13）
IPC大类 C01（13）
IPC小类 C01B（13）
IPC C01B031/04（12） C30B029/02（9） C30B025/18（6）
C23C016/26（5） C01B031/02（4） C01B032/186（4）
B82Y040/00（3） C23C016/44（3） C30B029/36（3）
B82B003/00（2） C01B032/182（2） C01B032/188（2）
C23C016/02（2） C30B001/02（2） C30B025/02（2）
发明人 JANG H（2） LEE D（2） LEE S（2）
OH E（2） RUOFF R S（2） TOH C T（2）
公开年 2015（13）
申请年 2014（7）  2013（4）  2015（2） 
专利权人 LG CHEM LTD（2） UNIV SINGAPO.（2） UNIV TEXAS S.（2）

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Forming graphene single crystal domain on substrate, comprises contacting substrate with passivating gas to create low nucleation site density substrate, and contacting the resultant with working gas at first elevated temperature.

COLOMBO L, RUOFF R S, HAO Y

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Selection of qualified region of chemical vapor deposited graphene film during fabrication of microelectronics, involves heating chemical vapor deposited graphene film formed on metal substrate using reaction gas, and removing defect.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Producing monocrystalline graphene, comprises producing base material containing metal thin film using high temperature generator, and supplying carbon source, and contacting high temperature part with carbon source.

OH E, LEE D, LEE S, JANG H

Manufacture of ordered graphene structure used for multitouch capacitive panel, involves exposing substrate to laser beam in presence of carbon source and moving substrate or laser beam relative to other, or decreasing laser beam power.

OEZYILMAZ B, TOH C T

Nanocomposite used for reverse storage of hydrogen, comprises monocrystalline or polycrystalline graphene in form of cylindrical spiral roll containing grains having preset minimum diameter and constant spacing.

KULA P, RZEPKOWSKI A, PIETRASIK R, ATRASZKIEWICZ R, DYBOWSKI K, KACZMAREK L, MODRZYK W

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Manufacture of monocrystalline graphene involves forming high-temperature portion on substrate with metal thin film using high-heat generating device, supplying carbon source, and contacting carbon source with high-temperature portion.

OH E, LEE D, LEE S, JANG H