国家/地区 美国（42）
IPC部 C（42）
IPC大类 C30（42）
IPC小类 C30B（42）
IPC C30B025/18（42）
发明人 KIM J（3） CHOI J（2） CHOI J Y（2）
FAN S（2） HAO Y（2） PARK H（2）
RUOFF R S（2） SHIN H（2） SHIN H J（2）
TOH C T（2） WEI Y（2） YOON S（2）
公开年 2015（7） 2013（6） 2014（6） 2021（5） 2016（4） 2017（3） 2018（3） 2009（2） 2011（2） 2022（2）
申请年 2013（8）  2016（7）  2014（6）  2012（5）  2020（3）  2021（3）  2008（2）  2015（2）  2017（2） 
专利权人 HON HAI PREC.（2） HONGFUJIN PR.（2） INT BUSINESS.（2） MASSACHUSETT.（2）
SAMSUNG ELEC.（2） UNIV SINGAPO.（2） UNIV SUNGKYU.（2） UNIV TEXAS S.（2）
UNIV TSINGHU.（2）

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Manufacturing monocrystalline graphene for display, secondary battery, solar cell, light-emitting device, catalyst and sensor, involves supplying aromatic carbon gas onto single-crystalline metal catalyst to manufacture graphene.

KIM B J, CHOI J, CHOI J Y, JUN K

Production of transition metal dichalcogenide-graphene heterojunction composite involves transferring graphene onto flexible substrate, depositing transition metal layer on substrate, and injecting gas containing plasma-treated sulfur.

KIM H U, SEOK H, LEE J, KIM T, KIM T S, SEOK H H, WOO K H

Fabricating single-crystalline ionically conductive materials for electrochemical cell by forming material on two-dimensional material over growth substrate and removing single-crystalline ionically conductive material from substrate.

KIM J, KONG W, BAE S, KONG L, KUM H, SHAOHORN Y, YU Y

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Composition of matter for light-emitting diode or photodetector device, has nanowires or nanopyramids that are epitaxially grown on graphene layer, and graphene layer is directly supported on crystalline substrate.

MUNSHI M, WEMAN H, FIMLAND B M, PIMLANDBOERNOBEEM

Fabricating hexagonal boron nitride comprises placing catalytic metal having hexagonal crystal structure and lattice mismatch with hexagonal boron nitride in chamber and growing hexagonal boron nitride on the catalytic metal while supplying nitrogen source and boron source into the chamber.

LEE C, SHIN H, HONG S, MA K, LEE C S, SUK S H, SHIN H J, LI C, SHEN X

Synthesis of graphene used in e.g. electronic applications, involves reacting drawn catalytic substrate with precursor gas containing hydrocarbon gas and hydrogen gas to form continuous single crystal graphene.

LIST F A, STEHLE Y Y, VLASSIOUK I V, SMIRNOV S N

Semiconductor structure having multiple-porous graphene layer, includes gallium nitride layer formed on multiple-porous graphene layer which is formed on semiconductor substrate.

LAI C, TAN C, SINGH P, LAI C S

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P