国家/地区 中国（13） 美国（8） 世界知识产权组织（7） 韩国（6） 欧洲专利局（EPO）（3） 日本（2）
IPC部 C（23）
IPC大类 C30（23）
IPC小类 C30B（23）
IPC C30B023/02（23）
发明人 WANG W（4） CHEN X（3） CHEN D（2）
CHEN Z（2） GUO L（2） SHEN B（2）
YANG X（2） ZHANG J（2） ZHANG Z（2）
公开年 2022（4） 2010（3） 2021（3） 2023（3） 2011（2） 2012（2） 2020（2）
申请年 2021（6）  2009（3）  2010（2）  2011（2）  2015（2）  2020（2）  2022（2） 
专利权人 CHINESE ACAD.（4） UNIV PEKING（2） UNIV SINGAPO.（2）

Growing single crystal III-nitrides on ceramic substrate comprises e.g. depositing filling material on surface of ceramic substrate, grinding and polishing to obtain smooth surface, and/or forming aluminum-oxygen compound layer or two-dimensional material layer on surface.

GUO F, YANG H, CHEN Z, WU J, SHEN B, YANG X

Visible-near infrared wide spectrum photoelectric detector is independent device and/or integrated in circuit, and contains flexible substrate, transparent conductive electrode, active layer, p-type ohmic contact layer, upper electrode layer, and silicon nitride passivation layer.

CHEN H, WANG W, DENG Z, LI X, JIA H

Preparing low transmission loss single crystal copper material comprises e.g. forming single crystal copper layer on substrate i.e. graphene layer surface, and peeling off single crystal copper layer from substrate in mixed gas atmosphere of argon and hydrogen.

WANG E, YUE X, HUANG Z, HE M, ZHANG Z, DING Z

Graphene composite comprises substrate, first thin film positioned on substrate, and second thin film positioned on first thin film, where first thin film includes graphene and second thin film includes at least any one of vanadium selenide, vanadium disulfide, vanadium ditelluride, tantalum sulfide.

CHOI B K, CHANG Y J, JANG Y

P-type transparent conductor with highly reduced graphene oxide thin film, has substrate and highly reduced graphene oxide thin film deposited on the substrate, in which the film is directly grown on substrate by pulsed laser deposition.

RAO R M S, JUVAID M M, SARKAR S, VENKATESAN T

Transferring gallium oxide epitaxial layer based on van der Waals film comprises e.g. using chemical vapor deposition to make polycrystalline continuous graphene film, extending gallium oxide on graphene film and adhering thermal release adhesive tape to gallium oxide epitaxial layer upper surface.

HAO Y, MA P, ZHANG J, WANG D, CHEN D, NING J

Producing single crystal metal layer used as a catalyst layer in a process of two-dimensional (2D) material growth by arranging metal source material and deposition substrate in a closely-spaced relationship, and heating under vacuum.

BURTON O J, HOFMANN S

Preparing cerium-doped topological insulator bismuth telluride single crystal thin film involves using cerium source, bismuth source and tellurium source as evaporation source, degassing substrate, and transferring substrate.

TENG P

Producing epitaxial structure useful in flexible electronic device comprises providing multilayer graphene layer having through-holes, providing single crystal substrate having graphene layer formed and growing semiconductor structure.

HONG Y, JUNG J S, JUNGJOONSUCK

Growing single crystal gallium nitride film on arbitrary self-supporting substrate involves nitride deposition on any self-supporting substrate, transferring the two-dimensional material with single crystal hexagonal structure.

YANG X, SHEN B, LIU D, SHEN J, CAI Z, CHEN Z, MA C