国家/地区 欧洲专利局（EPO）（10）
IPC部 C（10）
IPC大类 C30（10）
IPC小类 C30B（10）
IPC C30B025/02（10）
发明人 COJOCARU C（2）
公开年 2010（2） 2011（2） 2014（2）
申请年 2010（2）  2011（2） 
专利权人 CENT NAT REC.（2） ECOLE POLYTE.（2）

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Graphene film used in an electrode is obtainable by epitaxially growing metal layer on surface of substrate, peeling off the metal layer, and depositing graphene onto surface of metal layer.

WODTKE A, YU H K, ALEC W, HAK KI Y, YU H, YUK H K, YUK H

Separating graphene film from liquid graphene-forming matrix involves upon completion of heating/adding hydrocarbon mixture, and during cooling, sliding mould frame over surface of liquid forming matrix, and lifting mould frame above matrix.

ATRASZKIEWICZ R, DYBOWSKI K, KLINOWSKI B M, KULA P, MODRZYK W, PIETRASIK R, ZAWISTOWSKI P Z

Manufacturing film of graphene, comprises depositing metal layer on surface of substrate, and continuously realizing buried carbon rich area inside metal layer by creating and maintaining carbon rich area so as to form film of graphene.

COJOCARU C

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O

Manufacture of graphene thin film used in metal oxides window electrodes for solid-state solar cells involves disposing catalyst thin film on back support substrate, introducing hydrocarbon, and heating to promote graphene growth.

VEERASAMY V S, VEERASAMY V

Saturable absorber device for fiber laser, has saturable absorber material supported by optical fiber, which is provided with graphene, graphene-polymer composite, graphene oxide, graphene derivative or functionalized graphene.

LOH K P, BAO Q, TANG D Y, ZHANG H, KIAN L P, BAO O, LOH K, TANG D

Controlled growth of graphene film comprises preparing substrate of metal layer having phase diagram with carbon on surface to obtain homogeneous solid solution, exposing layer to controlled flow e.g. carbon atoms and changing the phase.

BARATON L, COJOCARU C S, PRIBAT D, COJOCARU C