国家/地区 韩国（4） 美国（4） 欧洲专利局（EPO）（2） 印度（2）
IPC部 C（9）
IPC大类 C01（9）
IPC小类 C01B（9）
IPC C01B032/182（4） C01B032/194（4） G03F001/62（4）
C01B032/184（3） G03F007/20（3） B82Y040/00（2）
C01B032/20（2） G03F001/22（2）
发明人 KIMHYUNGKEUN（3） KIM H K（2） KIM H M（2）
KIM H Y（2） KIM S G（2） LEE G H（2）
MI K H（2）
公开年 2021（6） 2022（2）
申请年 2020（9）
专利权人 KOREA ELECTR.（3）

Optical element for use with electromagnetic radiation at specific wavelength in ultraviolet, extreme ultraviolet or soft X-ray bands, comprises reflective, transmissive, protective, interdispersed or capping layer coating with materials.

JAISWAL S

Producing pellicle structure useful for protecting photomask in semiconductor integrated circuits, comprises e.g. forming lower protective layer on entire surface of substrate, and forming amorphous thin film on lower protective layer.

KIM K B

Preparing pellicle for extreme UV exposure with graphene defect healing layer, involves forming support layer of silicon nitride material on silicon substrate, and forming core layer of graphene material on support layer.

KIMHYUNGKEUN, MI K H, LEE W S, YANG H S, JOJINWOO, KIM B, JEONJUNHYUCK, LEE G H, KIM H Y, JEON J H, KIM S G, CHO J W, KIM H M, KIM H K

Producing vertically aligned multilayer graphene sheets comprises placing substrate in alumina crucible having fixed amount of oil, where oil is edible or non-edible oil.

GHAI V, CHAWLA S, AGNIHOTRI P K

Manufacturing graphene-metal composite pellicle containing graphene by forming metal catalyst layer on silicon substrate, forming core layer by growing graphene, forming protective layer, forming heat dissipation layer and forming pellicle frame composed of silicon substrate-metal catalyst layer.

KIM H, LEE G, KIMHYUNGKEUN

Formulation used to prepare dispersion of graphene in water in presence of surfactant contains chitosan solution having chitosan powder, water and acetic acid, and activated graphene i.e. black amorphous powder composition of raw graphene.

ALI M N

Directly growing multilayer graphene used in a pellicle for extreme ultraviolet lithography, involves forming small-layer graphene on SiN substrate, forming metal catalyst layer on small-layer graphene, and forming an amorphous carbon layer.

KIMHYUNGKEUN, MI K H, KIM H Y, LEE G H, SUNG K H, KIM H M, KIM S G, KIM H K

Performing graphene-enabled block copolymer lithography transfer to arbitrary substrate involves applying graphene on surface, adding block copolymers to graphene, and phase-separating block copolymers.

LEE W K, WHITENER K E

Processing the double-sided doping of single-layer graphene comprises e.g. using methane, hydrogen, and argon as gas sources in catalytic metals in a low-pressure CVD system growth of single-layer graphene film on the substrate.

LI D, CHEN Y, SUN X, JIA Y, JIANG K, SHI Z, ZANG X