国家/地区 美国（9）
IPC部 C（9）
IPC大类 C01（9）
IPC小类 C01B（9）
IPC C01B032/194（9）
发明人 KIM H K（2） KIM H M（2） KIM H Y（2）
KIM S G（2） MI K H（2）
公开年 2021（3） 2018（2）
申请年 2020（2） 
专利权人 KOREA ELECTR.（2）

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Pellicle film used for preventing dust from adhering to photomask or reticle, comprises layers laminated to each other and/or layers provided with one or more openings.

TAKADA N, SEKI K, KODERA Y, SEKIGAZUNORI, YUTAKA G

Directly growing multilayer graphene used in a pellicle for extreme ultraviolet lithography, involves forming small-layer graphene on SiN substrate, forming metal catalyst layer on small-layer graphene, and forming an amorphous carbon layer.

KIMHYUNGKEUN, MI K H, KIM H Y, LEE G H, SUNG K H, KIM H M, KIM S G, KIM H K

Performing graphene-enabled block copolymer lithography transfer to arbitrary substrate involves applying graphene on surface, adding block copolymers to graphene, and phase-separating block copolymers.

LEE W K, WHITENER K E

Pellicle film for pellicle used as dust guard in photolithography during manufacture of e.g. semiconductor device, has main layer made of single crystal silicon, and graphene provided on both sides of main layer.

YANASE Y, YANASE M

Graphene wiring structure for use in semiconductor device, has multilayer graphene formed on insulating film, where average particle diameter of graphene crystals is larger than width of multilayer graphene.

MIYAZAKI H, SAKAI T, NISHIDA Y, YOSHIDA T, YAMAZAKI Y, KATAGIRI M, SAKUMA N, SAKUMA H

Method of making a pellicle for use in extreme ultraviolet (EUV) lithography system, by depositing graphene layer over first material layer, and depositing amorphous silicon layer over graphene layer.

TU C, CHEN C, YOO C S, CHANG J, TSAI C, LIU P, LEE H, LIN C, LIN Y, TU Z, CHEN J, CAI J, YOU Q, ZHANG Z, LIN Z, LIU B, LI X, YOO C

Manufacture of molded filter material involves forming support layer on graphene layer formed on initial stage substrate for graphene, forming water passage hole in support layer, and forming water passage hole in graphene layer.

KANEKO K, TAKAGI T, MURATA K, MURADA K, TAKAGE T, TAKAGI H

Manufacturing graphene film involves preparing catalyst metal having at least surface on which graphene is formed, forming support layer on graphene, and isolating graphene and support layer from catalyst metal.

NA D, LEE E, YOON J, NA D H, LEE E K, YOON J H, LI Y