国家/地区 韩国（21）
IPC部 B（21）
IPC大类 B82（21）
IPC小类 B82B（21）
IPC B82B003/00（19） C01B031/02（13） B82Y040/00（12）
C01B031/04（11） C23C016/26（10） B82B001/00（8）
B82Y030/00（7） H01L021/02（4） C01B032/186（3）
C01B032/188（3） C30B029/02（3） H01B001/04（3）
H01L021/20（3） H01L029/786（3） B01J019/08（2）
发明人 KIM H（3） CHOI J（2） JEONG S（2）
LEE D H（2） LEE J（2） PARK I K（2）
PARK J H（2） PARK S（2） ROH Y（2）
VEERASAMY V（2） VEERASAMY V S（2） YEON S（2）
YOO J B（2）
公开年 2011（7） 2012（5） 2014（4） 2013（2） 2016（2）
申请年 2011（5）  2012（5）  2009（3）  2015（3）  2010（2）  2014（2） 
专利权人 UNIV SUNGKYU.（6） SAMSUNG ELEC.（4） UNIV SUNGKYU.（3） UNIV SUNGKYU.（3）
GUARDIAN GLA.（2） GUARDIAN IND（2） GUARDIAN IND.（2） KIM H（2）

Graphene structure has graphene layer which is provided on substrate, and is included with several convex portions of hollow structure.

KU J, KO W, KIM H, KU J Y, KO W H, KIM H W

Manufacture of core-shell structured nanowire e.g. copper nanowire used for transparent electrode for e.g. solar cell, involves providing metal nanowire and coating metal nanowire with graphene by plasma chemical vapor deposition.

LEE Y G, JEONG Y J, AHN Y M, LEE D H

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Graphene pattern formation method involves forming DNA pattern, and forming graphene pattern on DNA pattern.

JEONG S, LEE J, PARK I K, PARK J H, PARK S, ROH Y, YEON S

Patterning a graphene in the manufacturing of semiconductor chip, by forming a DNA pattern and forming graphene on pattern, where pattern is formed by forming metal ion pattern on a substrate and adsorbing a DNA structure on ion pattern.

JEONG S, LEE J, PARK I K, PARK J H, PARK S, ROH Y, YEON S

Hydrophobic nano-graphene laminate used as graphene device e.g. graphene electrode, comprises trifluoromethyl-functionalized hollow spherical material with diameter of preset range, and has thickness and contact angle of preset range.

JANG J H, LEE J S

Metal powder coated with multilayer graphene and/or nano graphite layer on its surface.

YONG S K, LEE D W, KIM J S, JEON J N, CHOI H R

Fabricating graphene structures, comprises fabricating a crystalline graphene layer on a surface, and subsequently decreasing crystallographic disorder of crystallographically disordered edges by heating crystalline graphene layer.

ARNOLD M S, GOPALAN P, SAFRON N S, KIM M, UNG K M

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T