国家/地区 中国（11）
IPC部 C（11） H（3） B（2）
IPC大类 C01（11） C09（3） H01（3）
B82（2）
IPC小类 C01B（11）
IPC C01B031/04（10） C01B031/02（2） C01B032/186（2）
C01B032/19（2） C09K005/14（2）
发明人 XIE X（8） DING G（6） JIANG M（4）
SUN J（4） CHEN D（2） DI Z（2）
HE P（2） LI T（2） LI X（2）
LIANG C（2） LIU J（2） LU Z（2）
WANG G（2） WANG H（2） WANG L（2）
公开年 2014（8） 2013（3）
申请年 2013（11）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（11）

Preparing sulfur doped graphene using chemical vapor deposition method comprises e.g. providing metal substrate, placing in chemical vapor deposition reaction chamber, introducing inert gas, carrying out aeration and exhaust gas treatment.

LI T, LIANG C, WANG Y

Transferring graphene to intermediate layer used for preparing graphene electric device, involves mixing polydimethylsiloxane glue with raw substrate, where polydimethylsiloxane glue is solidified into polydimethylsiloxane transition layer.

LI T, LIANG C, WANG W, WANG Y

Preparation of graphene-based chip cooling material by reacting substrate, heating, plasma treating, depositing graphene, forming, cooling and transferring.

LIU J, XIE X, WANG L, ZHANG Y, WANG H

Preparing graphene oxide powder comprises adding graphite oxide in aqueous solution of graphene oxide quantum dots to form a mixed solution of graphene oxide and ammonium salts of the quantum dot.

XIE X, JIANG M, DING G, SUN J, HE P

Purifying graphene oxide quantum dots involves mixing aqueous solution of oxidized graphene quantum dots with surfactant to form mixed solution, followed by adding non-polar solvent, extracting graphene oxide quantum dots, and drying them.

XIE X, JIANG M, DING G, SUN J, HE P

Making hyperbolic media and graphene nanobelt combination antenna device comprises e.g. rotating first plane which is parallel to hyperbolic media upper surface, forming incident interface by rotating first plane with hyperbolic media.

LIU Z, LV C, CAO J

Manufacture of vertical-graphene heat-radiating material involves performing plasma pretreatment of growth substrate, carrying out plasma enhanced chemical vapor deposition on growth substrate, and transferring vertical-graphene.

WANG H, XIE X, WANG L, ZHANG Y, LIU J

Preparation of graphene involves injecting germanium ion to silicon carbide substrate, annealing obtained structure, breaking silicon carbide substrate to silicon and carbon, combining silicon and germanium, and recombining carbon.

DI Z, CHEN D, DING G, WANG G, XIE X, ZHANG M, YE L, ZHENG X, LU Z

Controlling growth of number of graphene layer involves forming first nickel layer on copper substrate, injecting using ion injection method in nickel layer, annealing, introducing carbon by copper in nickel layer, reconstructing graphene.

CHEN D, DI Z, DING G, LU Z, MA J, WANG G, XIE X, ZHANG M

Making nano-sized graphene quantum dot powder used in e.g. solar photovoltaic cell by chemical co-precipitation method involves wet grinding natural crystalline flake graphite, oxidizing and conducting first intercalation and heat treatment.

DING G, JIANG M, LI X, SUN J, XIE X, XU X