国家/地区 韩国（11） 美国（3）
IPC部 C（11） B（6） H（4）
IPC大类 C01（11） B82（5） H01（4）
IPC小类 C01B（11）
IPC C01B031/04（10） B82B003/00（4） C01B031/02（2）
发明人 JEON S W（2） KIM J D（2） KIM S O（2）
LEE K S（2）
公开年 2015（8） 2016（3）
申请年 2014（11）
专利权人 KOREA ADVANCED INST SCI TECHNOLOGY（11）

Manufacturing method of graphene used for e.g. transparent electrode, placing graphite in ionic solution and applying first voltage, peeling of expanded graphite from aqueous acid solution and applying second voltage.

KIM S O, SHIM J W

Organic light emitting diode device comprises an anode, a hole transporting layer containing partially reduced graphene oxide, and a hole injection layer formed between the anode and the hole transporting layer.

CHOI K C, KIM K J

Graphene hot electron nano-diode for optical detection device and energy conversion device, has electronic amplification type graphene layer, semiconductor layer forming Schottky junction with pinned layer, and electrodes.

LEE C, LEE H, LEE Y K, PARK J

Producing graphene quantum dot of core-shell structure useful in light emitting electrical element, comprises e.g. mixing graphene quantum dot solution and capping agent by dissolving graphene quantum dot in solvent, and removing solvent.

KIM B J, LEE D C, PAEK K Y, YANG H S

Manufacture of graphene nanostructure for energy storage device, involves mixing graphene powder aqueous solution, metal oxide aqueous solution, adding nitrogen-containing aqueous solution and oxidizing agent, and irradiating microwave.

KIM H, KUMAR R, OH I, KIM H J, OH I K

Zinc oxide-graphene oxide composite useful in photocatalyst, energy storage device, solar cell, transparent electrode and field emitter, comprises graphene oxide, and zinc oxide nanostructures attached to the surface of graphene oxide.

KIM J D, LEE K S

Producing iron oxide-graphene oxide composite, comprises preparing iron oxide primary nanoparticles and reacting with cationic surfactant to obtain iron oxide nanoclusters, and reacting iron oxide nanoclusters with graphene oxide dispersion.

BYUN D H, KIM J D, LEE K S, PARK M S

Manufacture of n-doped graphene used for manufacturing electrical components, involves exposing graphene to ammonium fluoride, leading to formation of fluorine layer on portion of surface of graphene layers.

BONG J H, CHO B J, SUL O, YOON H A, ALEXANDER Y H, SUL W J, CAO B, FENG Z, XUE W, CHO B, BONG J

Producing graphene, comprises e.g. heating metal wire located on substrate into a chamber to form gaseous metal catalyst, injecting a carbon source gas into the chamber, and heating first portion of substrate using heated metal wire.

BAEK J W, JEON S W, LEE J S

Graphene hydrogel for preparing graphene hydrogel nanocomposite material and article e.g. energy storage device, comprises pores between laminated graphene sheets.

KIM S O, MAITI U N, LIM J W, LIM J, NARAYAN M U