国家/地区 日本（13）
IPC部 C（13） H（8） B（5）
G（3）
IPC大类 C01（13） H01（8） C23（6）
B01（2） B32（2） C30（2）
G01（2） H05（2）
IPC小类 C01B（13）
IPC C01B032/186（13）
发明人 MATSUMOTO T（3） HAYASHI K（2） IFUKU R（2）
KONDO O（2）
公开年 2022（6） 2021（5） 2023（2）
申请年 2021（13）
专利权人 FUJITSU LTD（3） TOKYO ELECTR.（3） NAT INST ADV.（2）

Producing multilayer graphene, involves synthesizing multilayer graphene from carbon source using iron-chromium alloy film as catalyst.

HAYASHI K, KONDO O

Electrical connection component for e.g. electric contact, comprises base material and nanocarbon material film composed of graphene laminated material formed by laminating two layers of graphene single layer materials.

KITANO A, SHIMIZU T, KUBO T

Producing multilayer graphene involves recrystallizing catalyst film by performing heat treatment of heating catalyst film containing iron and nickel in atmosphere containing hydrogen, and another atmosphere containing hydrogen and hydrocarbons to form stacked graphenes.

HAYASHI K

Graphene laminate comprises substrate having insulating surface, intermediate layer located on and in contact with substrate, and graphene film located on intermediate layer and in contact with intermediate layer.

OKIGAWA Y, YAMADA T

Optical element comprises substrate, multilayer graphene provided on substrate, electrode connected to multilayer graphene, and another electrode connected to multilayer graphene.

KONDO O

Ultra-high specific surface area carbon material for e.g. electrode material, comprises graphene structure having two-dimensional or three-dimensional periodic rule structure, reflecting shape of pore of zeolite, where carbon material comprises metal atom to be bonded to graphene edge through oxygen.

TORII A

Forming film by carrying substrate having recess into processing container, placing on mounting table provided in processing container, using plasma of mixed gas containing inert gas and carbon-containing gas, while applying high frequency bias, and forming graphene film on substrate.

SUGIURA M, MATSUMOTO T

Substrate processing method for processing substrate, involves performing first plasma processing while holding carried-in substrate in first position, and performing second plasma processing in state where substrate support pin is lowered and substrate is held at second position.

WADA M, KABUKI N, IFUKU R, MATSUMOTO T

Method for forming film e.g. graphene film on substrate, involves supplying aromatic hydrocarbon gas having functional group, to substrate on which base film is formed, and activating aromatic hydrocarbon gas adsorbed on surface of base film by plasma of reaction gas containing rare gas.

MATSUMOTO T, IFUKU R

Method for measuring thickness of graphene layer directly grown on silicon substrate by using X-ray photoelectron spectroscopy (XPS), involves obtaining effective attenuation length from linear relationship between measurement results by transmission electron microscope and XPS.

LEE E K, CHO Y J, KIM S W, BYUN K, SONG H J, SHIN H J