国家/地区 韩国（11）
IPC部 C（11） H（7） B（3）
IPC大类 C01（11） C23（7） H01（7）
B01（2）
IPC小类 C01B（11）
IPC C01B032/186（11）
发明人 BYUN K（3） BYUN K E（3） LEE C（3）
LEE C S（3） SHIN K（3） SHIN K W（3）
KIM C（2） SHIN H（2） SHIN H J（2）
公开年 2023（6） 2022（5）
申请年 2022（11）
专利权人 SAMSUNG ELEC.（4） UNIV SEOUL N.（2）

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Semiconductor device comprises interconnection structure comprises seed layer disposed on first conductive layer, seed layer including graphene; and metal migration barrier layer disposed on seed layer, metal migration barrier layer including MXene.

HAN J H, KOO W T, HAN Z, KOO W, TAE K W

Graphene interconnect structure useful for electronic device comprises first oxide dielectric layer including porous silicon oxide, or amorphous boron nitride, second oxide dielectric layer including aluminum oxide and graphene layer.

KIM C, BYUN K E, SHIN K W, LEE C S, BAEKWON P, PARK B, LEE C, SHIN K, BYUN K

Manufacture of wiring used in electronic device, involves growing graphene layer on substrate using plasma of hydrocarbon at specific temperature by plasma enhanced chemical vapor deposition, and doping graphene layer with metal.

LEE C, LEE M, SHIN H, BYUN K, KIM K, SHIN K, SHIN K W, KIM K B, BYUN K E, SHIN H J, HYUN L, LEE C S

Depositing graphene barrier film, involves placing substrate containing the titanium thin film layer into substrate processing system chamber forming processing space, supplying first reaction gas into chamber, supplying second reaction gas, and forming graphene layer on titanium thin film layer.

PARK J, LI J, JIN D, SUN W, KIM T, YIN Y, TIAN Z, BAK H, PARK J H, LEE K J, KIM D W, SUN W H, KIM T S, YOON W J, JEON J H, PARK H K, PARK H, JEONJINHO, YUN W J, WOO K D, LEE K

Manufacturing graphene useful in devices and laminate comprises growing graphene on single-crystal metal foil by supplying gaseous carbon source to single-crystal metal foil and exfoliating the graphene from single-crystal metal foil.

RUOFF R S, WANG M, DARUO

Two-dimensional microporous graphene for e.g. energy storage materials e.g. electrode active materials, electronic materials e.g. quantum dots, and membranes or films e.g. separator and chemical detector, has preset average pore size, interpore spacing, and standard deviation of interpore spacing.

KIM C, CHOI M, KI C M, KIM C H

Continuous mass production of graphene using thermal plasma comprises, generating plasma by injecting, injecting expandable graphite and intercalation graphite, exfoliating graphene by expanding expanded graphite, and drying by hot air.

KYOUNGJEONGBAE, HWAN B J, CHOI S

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S