国家/地区 韩国（21） 美国（20） 中国（8） 欧洲专利局（EPO）（7） 日本（6） 世界知识产权组织（5）
IPC部 C（24）
IPC大类 C01（24） H01（18） C23（12）
B82（9） B01（5） B05（2）
B32（2） G01（2） G03（2）
IPC小类 C01B（24）
IPC C23C016/26（12） C01B032/186（11） C01B031/04（9）
C01B031/02（7） B82Y030/00（6） C01B032/182（6）
H01B001/04（6） B82Y040/00（4） C23C016/02（4）
C23C016/50（4） C23C016/511（4） H01L021/20（4）
B82B001/00（3） B82B003/00（3） C01B032/194（3）
发明人 LEE E（24）
公开年 2021（5） 2011（3） 2013（3） 2020（3） 2022（3） 2012（2） 2014（2） 2016（2）
申请年 2021（6）  2010（3）  2012（3）  2015（3）  2011（2）  2013（2）  2019（2）  2020（2） 
专利权人 SAMSUNG ELEC.（17） UNIV SUNGKYU.（5） UNIV SUNGKYU.（3） CENT ADVANCE.（2）
DAEJOO ELECT.（2） HANWHA AEROS.（2） HANWHA TECHW.（2） SAMSUNG TECH.（2）
UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Porous silicon-carbon composite used for negative electrode active material for lithium secondary battery, comprises silicon particles, magnesium fluoride, and carbon.

LIM J C, LEE J, JEON Y M, LIM S W, PARK J G, LEE H S, LIM H H, NAM S J, LEE E, LIM J, HYUN L J, IMSUNGWOO, HEE L, JIN N, PARK S

Forming graphene product including nanocrystalline graphene by plasma enhanced chemical vapor deposition process, involves growing nanocrystalline graphene directly on substrate using plasma of reaction gas.

LEE E, LEE S, BYUN K, KIM C, LEE C, SHIN H, SHIN K, SONG H

Measuring thickness of graphene layer grown on silicon substrate by using X-ray photoelectron spectroscopy device comprises obtaining signal intensities from graphene layer to emit X-ray radiation and calculating thickness of graphene layer.

LEE E, CHO Y, KIM S, BYUN K, SONG H, SHIN H

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Apparatus for manufacturing graphene by using plasma, has gas supply for supplying reducing gas into reaction chamber at height from upper surface of substrate supporter in height direction of reaction chamber.

LEE C, LEE E, SHIN H, BYUN K, KIM S, BYUN K E, SHIN H J, LEE C S

Silicon-silicon composite oxide-carbon composite used for negative electrode active material for lithium secondary battery, comprises core-shell structure comprising core comprising silicon, silicon oxide compound, and magnesium silicate, and shell comprising carbon layer, and has preset span value.

LEE E, PARK H, LIM S W, OH S M, LIM J C, HUNSOO P, IMSUNGWOO, LIM J

Growing graphene selectively involves forming ion implantation region and ion non-implantation region in substrate by implanting ions locally into substrate and selectively growing graphene in ion implantation region.

LEE E, SHIN H, SHIN K, BYUN K, KIM C, LEE C, LEE C S, BYUN K E, SHIN K W, SHIN H J

Formation of graphene for metal wiring for semiconductor device, involves directly growing graphene on non-catalyst substrate based on injecting reaction gas comprising carbon source having preset ionization energy, into reaction chamber.

SONG H, LEE E, LEE C, KIM C, BYUN K, SHIN K, SHIN H, SONG H J, LEE C S, BYUN K E, SHIN K W, SHIN H J

Graphene formation involves forming carbon monolayer on substrate by injecting reaction gas into reaction chamber, where former reaction gas comprises source being carbon source and including component.

SHIN H, SHIN K, KIM C, NAM S, BYUN K, SONG H, LEE E, LEE C, JUNG A, CHO Y, SHIN H J, SHIN K W, NAM S G, BYUN K E, SONG H J, LEE C S, JUNG A R, CHO Y C