国家/地区 美国（17） 中国（13） 世界知识产权组织（13） 日本（12） 韩国（11） 欧洲专利局（EPO）（7） 台湾（6） 以色列（3） 新加坡（3） 加拿大（2） 香港（2） 墨西哥（2）
IPC部 B（17）
IPC大类 C01（17） B82（16） H01（11）
B32（6） B01（4） C08（3）
C23（3） A61（2） B05（2）
C25（2）
IPC小类 C01B（17）
IPC C01B032/182（17）
发明人 TODORIKI H（4） TODOROKI H（4） CHOI J（2）
KOKUNI T（2） NOMOTO K（2） OGUNI T（2）
公开年 2013（10） 2012（6）
申请年 2012（17）
专利权人 SEMICONDUCTO.（5） TODORIKI H（3） NOMOTO K（2） SAMSUNG ELEC.（2）

Making metal oxide-graphene composite, comprises providing composition comprising graphene oxide and elemental metal dispersed in liquid medium, and heating composition in sealed chamber at temperature above nominal boiling point of medium.

ZHAO C

Etching graphene nanostructure, by providing piece of highly oriented pyrolytic graphite, analyzing first window, second window, and third window, and applying voltage gradient.

DARLING M J

Graphene sheet useful in a transparent electrode, a solar cell, a conductive thin film, a display device, a hydrogen storage medium and an electrical device, comprises intercalation compound comprising organic compound, and graphene layers.

CHOI J

Heterogeneous laminate used e.g. in thermoelectric element of thermoelectric module which is used in thermoelectric apparatus, comprises graphene and thermoelectric inorganic compound (e.g. cobalt-antimony compound) disposed on graphene.

CHOI J, BAIK S, HONG S, KIM W, KIM E, LEE Y, BAIK S H, CHOI J Y, HONG S H, KIM E S, KIM W Y, LEE Y H, BAEK S, LI Y

Carbonaceous material used for e.g. electrode catalyst, comprises graphene doped with metal atom and at least one type of nonmetallic atom chosen from nitrogen atom, boron atom, sulfur atom, and phosphorus atom.

NAKANISHI S, KAMAI R, SUZUKI Y, HASHIMOTO K, KAMIYA K

Manufacture of graphene oxide reduced material for forming electrode for silicon-based semiconductor, involves synthesizing graphite oxide flakes from graphite flakes and forming graphene oxide dispersion solution.

JEONG S, LEE G, HAN J, JEONG H, KIM S, HAN J T, JEONG H J, JEONG S Y, KIM S H, LEE G W

Segmented graphene nanoribbon useful for generating heterojunctions and heterostructures, comprises at least two different graphene segments covalently linked to each other.

BLANKENBURG S, CAI J, FASEL R, FENG X, MUELLEN K, PASSERONE D, PIGNEDOLI C, RUFFIEUX P, MULLEN K, PIGNEDOLI C A, TSAI J, CAI Y

Forming cleaned nanotube-graphene hybrid thin film on a substrate, comprises depositing the nanotube thin-film over a substrate to produce a layer of nanotube thin-film, and removing impurities from surface of layer of nanotube thin-film.

BOL A A, CHANDRA B, KASRY A, MAAROUF A, MARTYNA G J, TULEVSKI G S

Fabricating graphene structures, comprises fabricating a crystalline graphene layer on a surface, and subsequently decreasing crystallographic disorder of crystallographically disordered edges by heating crystalline graphene layer.

ARNOLD M S, GOPALAN P, SAFRON N S, KIM M, UNG K M

Forming electrode material comprises forming layer including graphene oxide on first conductive layer, immersing first and second conductive layers in electrolyte and electrochemically reducing part of graphene oxide in first layer.

TODORIKI H, SAITO Y, KAWAKAMI T, NOMOTO K, YUKAWA M, TODOROKI H, YUGAWA M, YONEDA Y