国家/地区 台湾（20）
IPC部 C（20） H（14） B（4）
G（2）
IPC大类 C01（20） H01（12） B82（4）
H05（4） C23（2） C30（2）
IPC小类 C01B（20）
IPC C01B032/182（20）
发明人 FAN S（3） JIN Y（3） LI Q（3）
ZHANG L（3） ZHANG T（3） BADCOCK T J（2）
DIXON S（2） GUINEY I（2） HE M（2）
HUANG C（2） HUANG H（2） HUANG J（2）
KAINTH J（2）
公开年 2022（20）
申请年 2021（11）  2022（7）  2020（2） 
专利权人 TAIWAN SEMIC.（5） HON HAI PREC.（3） UNIV TSINGHU.（3） CTRON ADVANC.（2）
PARAGRAF LTD（2）

Transistor for semiconductor device, has channel layer that comprises graphene layer and hexagonal boron nitride sheets dispersed in graphene layer and arrangement directions of hexagonal boron nitride sheets that are aligned and source/drain region next to gate stack that is obtained.

CHEN Z, CHU Z, CHEN T, CHUU C

Preparation of graphene dispersion used for preparing graphene composite film, involves mixing graphene and inducer comprising sodium silicate solution, and ultrasonically oscillating obtained dispersion.

HUNG W S, HUANG C H, SHI M

Heat dissipation structure for electronic device e.g. mobile phone, has heat dissipation module whose side protrudes from top surface of heat generating element, and does not contact with surface of carrier.

HE M, HUANG H, HUANG C

Graphene flake for regulating zero-point potential energy, has multi-component material surface charge modulation layer that is combined on surface of target object to modulate mesopotential of target surface.

CHANG C, TSENG I, SU Y

Upper electrode assembly used in plasma processing apparatus, has heat transfer sheet that is mounted between electrode plate and metal plate and having vertically oriented portion with vertically oriented graphene structures.

TSUJIMOTO H, KOBUNE T, LI L, LEE L, KOBUNEDAKAKI

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Integrated chip comprises substrate, first conductive component above substrate and second conductive component, upper portion of substrate and transversely adjacent to first conductive component where concave hole transversely separating first conductive component and second conductive component.

SUI X, LI M, CHUNG C, LU M, YANG S, SHUE S, LEE M

Semiconductor device, comprises substrate and fin structure on substrate, and includes epitaxial region, etch stop layer on epitaxial region, interlayer dielectric layer on etch stop layer, and metal contact through etch stop layer and interlayer dielectric layer.

SHEN T, HUANG J, CHEN S, LIN H, LIN C, WOON W, KHADERBAD M A

Manufacturing electronic device precursor e.g. organic LED, involves providing silicon wafer having growth surface, forming insulative layer on growth surface, forming graphene monolayer or multi-layer structure on insulative layer, forming further layers and/or electrical contacts.

BADCOCK T J, KAINTH J, DIXON S, GUINEY I, GRIFFIN R M

New graphene nanoribbon used for semiconductor, solar cell, transparent electrode, high-speed transistor and organic electroluminescent device.

ITAMI K, ITO H, MATSUSHIMA K, NAKATSUJI H, UENO R, ISHIDA S, OKUDA S