国家/地区 美国（47）
IPC部 C（47） H（30） B（27）
G（2）
IPC大类 C01（47） H01（29） B01（14）
B82（13） C09（11） C23（6）
C08（5） B32（3） C07（3）
B05（2） C03（2） C04（2）
G01（2）
IPC小类 C01B（47）
IPC C01B032/182（47）
发明人 JANG B Z（5） ZHAMU A（5） BEDWORTH P V（4）
SWETT J L（4） KAWASAKI M（3） TAMAKI E（3）
HEISE S E（2） HIRAI Y（2） ISOBAYASHI A（2）
KAJITA A（2） KIM H（2） LIU Y（2）
ODEH I N（2） OGUNI T（2） SAITO T（2）
公开年 2017（33） 2016（11） 2018（2）
申请年 2016（47）
专利权人 NANOTEK INST.（5） JANG B Z（4） LOCKHEED MAR.（4） ZHAMU A（4）
SEMICONDUCTO.（3） TORAY IND IN.（3） TOSHIBA KK（3） LOCKHEED COR.（2）
ODEH I N（2） SABIC GLOBAL.（2） UNIV CALIFOR.（2）

Fabric for soft armor and composite structure, comprise fiber functionalized having adhered reactive functional groups reacted with functionalized carbon nanostructures become covalently grafted to fiber becoming unit of intrinsic structure.

CRAIG H

Semiconductor device comprises transistor doping region of vertical transistor structure, graphene layer portion adjacent to portion of transistor doping region and transistor wiring structure adjacent to graphene layer portion.

SCHULZE H, RUPP R, RUHL G

Production of isolated graphene sheets from supply of coke or coal powder for e.g. graphene-containing ink composition involves exposing supply of coke or coal powder to supercritical fluid and rapidly depressurizing supercritical fluid.

ZHAMU A, JANG B Z

Direct-transfer method of producing graphene-embraced or graphene-encapsulated electrode active material for e.g. electrode involves mixing multiple particles of graphitic material and multiple particles of solid electrode active material.

ZHAMU A, JANG B Z

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Method of monitoring defect formation or healing in graphene film, involves exposing material to incident radiation, and generating data indicative of defects to provide temporal or spatial change in rate and size of defect formation.

SWETT J L, BEDWORTH P V

Graphene synthesis device used for synthesizing graphene wire, has thermal conversion unit that is provided close to center portion of chamber, and catalyst that is placed on thermal conversion unit and formed as thin and long metal.

WON D K, YUAN D

Semiconductor device, has interconnect having catalyst layer capable of growing graphene, graphene layer in side surface of catalyst layer, and non-catalyst layer in bottom surface of graphene layer, and incapable of growing graphene.

SAITO T, ISOBAYASHI A, KAJITA A

Graphene wiring structure comprises multilayered graphene having laminated multiple planar polycrystal graphene sheets, and metal oxyhalide and metal halide which exist in the interlayer of planar polycrystal graphene sheets.

MIYAZAKI H, SAKAI T, KATAGIRI M, YAMAZAKI Y

Making graphene-reinforced inorganic matrix composite, comprises e.g. mixing multiple particles of graphitic material and solid inorganic material, and operating apparatus for transferring graphene sheets to material particles surfaces.

ZHAMU A, JANG B Z